Content last revised on March 23, 2024
BSM25GB120DN2
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: No
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 38 A
Gate-Emitter Leakage Current: 180 nA
Maximum Operating Temperature: + 150 C
Package / Case: Half Bridge1
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Pd - Power Dissipation: 200 W
Factory Pack Quantity: 500
