Infineon FS75R12KE3_B3 | Robust 1200V IGBT3 Module for High-Reliability Drives
The Infineon FS75R12KE3_B3 is a high-performance 1200V, 75A half-bridge IGBT module designed for engineers who prioritize reliability, thermal efficiency, and cost-effectiveness in demanding power conversion applications. Housed in the industry-standard EconoPACK™ 3 package, this module leverages Infineon's proven TRENCHSTOP™ IGBT3 technology to deliver a superior balance of conduction and switching performance, making it a workhorse for a wide range of industrial systems.
Key Product Highlights
- Optimized for Low Conduction Losses: Features a low collector-emitter saturation voltage (VCE(sat)) thanks to the TRENCHSTOP™ IGBT3 chip, significantly reducing thermal load in low to medium-frequency applications.
- High Reliability and Lifetime: Built within the robust EconoPACK™ 3 package, known for its low thermal resistance and high power cycling capability, ensuring long service life under harsh operating conditions.
- Integrated NTC Thermistor: Includes an on-board NTC for precise temperature monitoring, enabling sophisticated thermal management and system protection schemes.
- Industry-Standard Footprint: The EconoPACK™ 3 housing simplifies design-in processes, allowing for easy integration into new designs and straightforward drop-in replacement in existing systems.
Key Electrical & Thermal Specifications
For engineers requiring quick access to critical performance data, the following table summarizes the core parameters of the Infineon FS75R12KE3_B3. For a comprehensive overview, you can Download the full Datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC nom) | 75 A |
| Collector-Emitter Saturation Voltage (VCEsat, typ. at IC=75A, Tvj=25°C) | 1.70 V |
| Maximum Junction Temperature (Tvj max) | 150°C (175°C overload) |
| Total Switching Losses (Ets, typ. at IC=75A, VCE=600V) | 13.50 mJ |
| Thermal Resistance, Junction-to-Case (Rth(j-c) per IGBT) | 0.19 K/W |
| Package Type | EconoPACK™ 3 |
Engineering Deep Dive: Core Technologies
The performance of the Infineon FS75R12KE3_B3 is rooted in two key Infineon technologies: the silicon itself and its packaging.
First, the module employs Infineon TRENCHSTOP™ IGBT3. This technology represents a sweet spot in the evolution of power semiconductors. It was specifically engineered for very low conduction losses (VCE(sat)), which is the primary source of power loss in applications operating at switching frequencies below 10 kHz, such as general-purpose motor drives. While newer technologies may offer faster switching, IGBT3's exceptionally low on-state voltage drop translates directly into lower operating temperatures and higher overall system efficiency for these target applications. To learn more about this trade-off, explore our guide on IGBT selection beyond VCE(sat).
Second, the EconoPACK™ 3 package provides a stable and thermally efficient platform. Its design features low internal stray inductance, which minimizes voltage overshoots during switching, reducing stress on the silicon. The integrated DCB (Direct Copper Bonded) substrate offers an excellent thermal interface to the heatsink, facilitating effective heat dissipation and ensuring the module operates within its safe operating area (SOA).
Application Sweet Spots: Where the FS75R12KE3_B3 Excels
The specific characteristics of this IGBT module make it an ideal choice for several key applications:
- Industrial Motor Drives: In Variable Frequency Drives (VFDs) for pumps, fans, and conveyors, the low VCE(sat) of the FS75R12KE3_B3 directly reduces inverter power loss, leading to smaller heatsink requirements and lower operational costs.
- Uninterruptible Power Supplies (UPS): The module's robustness and proven reliability are critical for UPS systems, where uptime is non-negotiable. Its thermal efficiency ensures stable performance during prolonged battery operation.
- Solar Inverters: For commercial solar installations, every percentage point of efficiency matters. The low conduction losses contribute to maximizing the energy harvest from the photovoltaic array, improving the system's overall return on investment.
Engineer's Corner: Frequently Asked Questions
1. How does the IGBT3 in this module compare to newer technologies like IGBT7?
IGBT3 is optimized for the lowest possible conduction losses (VCE(sat)) at moderate switching frequencies (typically
