Content last revised on November 29, 2025
BSM200GB120DLC: High-Efficiency 1200V/200A Dual IGBT Module for Power Conversion
The BSM200GB120DLC is a high-efficiency 1200V half-bridge module engineered to minimize power losses for superior thermal performance in dynamic load applications. It integrates two IGBTs in a half-bridge configuration, delivering a robust 200A continuous current capability with a typical VCE(sat) of just 1.70V. Key benefits include significantly reduced switching and conduction losses and enhanced thermal monitoring via an integrated NTC thermistor. By leveraging advanced Trenchstop™ IGBT4 and Emitter Controlled 4 diode technologies, it provides a balanced performance profile crucial for high-frequency power conversion systems.
Key Parameter Overview
Decoding the Specs for Enhanced Thermal Reliability
The technical specifications of the BSM200GB120DLC are optimized for efficiency and reliability in high-stress applications. The low collector-emitter saturation voltage (VCE(sat)) is a critical parameter, directly influencing conduction losses. Think of VCE(sat) as the electrical "friction" a component generates when it's on; the lower this value, the less energy is wasted as heat. This module's low VCE(sat) simplifies thermal design, potentially allowing for smaller heatsinks and contributing to a more compact and cost-effective system architecture.
| Parameter | Value |
|---|---|
| Electrical Characteristics (Tvj = 25 °C) | |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC) @ TC=80°C | 200 A |
| Repetitive Peak Collector Current (ICRM) | 400 A |
| Collector-Emitter Saturation Voltage (VCEsat) @ IC=200A, VGE=15V | 1.70 V (typ.) / 2.15 V (max.) |
| Gate-Emitter Threshold Voltage (VGE(th)) | 5.8 V (typ.) |
| Total Switching Losses (Ets) @ IC=200A, VCE=600V, VGE=±15V, RG=5.6 Ω | 22.0 mJ (typ.) |
| Thermal and Mechanical Characteristics | |
| Thermal Resistance, Junction-to-Case (Rth(j-c)) per IGBT | 0.24 K/W (max.) |
| Operating Junction Temperature (Tvj op) | -40 to +150 °C |
| Isolation Voltage (Visol) | 2500 V (AC, 1 min.) |
Download the BSM200GB120DLC datasheet for detailed specifications and performance curves.
Application Scenarios & Value
Achieving System-Level Benefits in High-Frequency Power Conversion
For high-frequency motor drives requiring a balance of low VCE(sat) and minimal switching losses, this IGBT4 module is a benchmark for performance. The BSM200GB120DLC is particularly well-suited for demanding industrial applications such as Variable Frequency Drives (VFDs), solar inverters, and high-power Uninterruptible Power Supply (UPS) systems. In a VFD controlling a heavy-duty motor, rapid acceleration and deceleration cycles create significant thermal stress. The module's low total switching energy (E_ts) directly mitigates heat generation during these high-frequency operations. This allows engineers to design systems with smaller, more cost-effective heatsinks or operate reliably at higher ambient temperatures within enclosed industrial cabinets, a crucial advantage for increasing power density and system longevity.
While the BSM200GB120DLC is optimized for 200A applications, for systems with lower power requirements, the BSM150GT120DN2 offers a comparable voltage class. Conversely, for applications demanding higher current handling, the BSM300GA120DN2 provides a higher power throughput within a similar technological framework.
Frequently Asked Questions
Engineering Insights into the BSM200GB120DLC
What is the primary advantage of the Trenchstop™/Fieldstop IGBT4 technology in the BSM200GB120DLC?
The core benefit is a superior trade-off between conduction losses (VCEsat) and switching losses. What is the impact of this trade-off? It enables higher efficiency across a wider range of operating frequencies compared to older IGBT generations.
How does the integrated NTC thermistor contribute to system reliability?
The NTC thermistor provides real-time temperature feedback from the module's baseplate to the system controller. This allows for the implementation of precise over-temperature protection, preventing the IGBTs from exceeding their maximum junction temperature, which is a leading cause of device failure and reduced operational life.
The datasheet specifies a VCE(sat) of 1.70V. How does this impact the thermal design of a power converter?
A lower VCE(sat) directly reduces the power dissipated as heat during the on-state (P_cond = VCEsat * Ic). This reduction in generated heat simplifies Thermal Management, often resulting in smaller heatsink requirements, lower cooling costs, and increased overall power density of the final system.
Technical Deep Dive
Synergy of IGBT4 and Emitter Controlled Diode Technology
A defining feature of the BSM200GB120DLC is the engineered synergy between its Trenchstop™ IGBT4 switches and the co-packaged Emitter Controlled 4 (EC4) freewheeling diodes. This combination is not merely about placing two components in one package; it is about optimizing their interaction to reduce system-level losses. The EC4 diode is specifically designed for soft reverse recovery. This characteristic is critical for minimizing the turn-on losses of the complementary IGBT in the half-bridge circuit.
To understand this, consider the interaction like a perfectly timed relay race. The freewheeling diode carries the current and must "hand it off" to the IGBT as it turns on. A standard diode might "fumble" this handoff, causing a current spike and significant energy loss. The EC4 diode, with its soft recovery, ensures a smooth and efficient transition. This reduces voltage overshoots, lowers electromagnetic interference (EMI), and allows the IGBT Module to turn on with less stress and wasted energy, a crucial factor for reliability in high-frequency designs.
For detailed technical inquiries or to discuss how the BSM200GB120DLC can be integrated into your specific power system design, please contact our technical sales team for further information and support.
