Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: No
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.1 V
Continuous Collector Current at 25 C: 420 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 1550 W
Package / Case: 62 mm
Maximum Operating Temperature: + 125 C
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
IGBT: 200A1200V;IGBT Modules 1200V 200A DUAL
