FZ1000R33HE3 Infineon 3300V 1000A Single IGBT Module

Content last revised on February 15, 2026

FZ1000R33HE3 Infineon 3300V 1000A Single IGBT Module for High-Power Traction and Grid Applications

The FZ1000R33HE3 is a high-performance single IGBT module designed for the most demanding high-voltage environments, delivering 3300V of blocking voltage and 1000A of continuous collector current. Utilizing TRENCHSTOP™ IGBT3 technology and housed in the robust IHM-B package, this module is engineered to provide superior power cycling capability and thermal stability. For railway traction and heavy-duty industrial drives requiring maximum ruggedness under variable load conditions, the FZ1000R33HE3 is the technically superior choice.

Top Specs: 3300V | 1000A | 10.2kV AC Isolation

Key Benefits: Enhanced thermal lifetime via AlSiC base plate; high-power density in standardized IHM footprints.

Addressing Hidden Engineering Concerns: One frequent inquiry involves the "HE3" suffix; this designates the 3rd generation Trenchstop technology specifically optimized for high efficiency and ruggedness in high-voltage switching applications, unlike standard industrial modules. What is the primary advantage of the AlSiC base plate? It provides a coefficient of thermal expansion (CTE) that closely matches the internal ceramic substrate, significantly reducing mechanical stress during temperature fluctuations.

Engineering FAQ

Front-Loading Technical Answers for Design Verification

How does the 10.2kV isolation rating impact system-level dielectric safety?
The 10.2kV AC isolation voltage serves as a high-security vault for your control electronics. In 3300V systems, transient overvoltages are a constant threat; this extreme isolation barrier ensures that even during catastrophic faults or lightning surges in traction grids, the high-voltage side remains electrically sequestered from the sensitive gate-drive and logic circuitry.

Does the AlSiC base plate material offer specific advantages over standard copper?
Yes. Standard copper base plates expand and contract at a much higher rate than the silicon chips and ceramic substrates above them. Think of the AlSiC (Aluminum Silicon Carbide) base plate as the expansion joints in a highway bridge; it allows the module to breathe under thermal load without tearing the internal solder joints, which is the leading cause of premature failure in high-power cycling applications like locomotives.

What is the significance of the 1000A collector current rating at high temperatures?
The 1000A rating is not just a peak value; it represents the module's ability to handle sustained heavy loads. In a Variable Frequency Drive (VFD), maintaining low conduction losses (low Vce(sat)) at this current level is critical to preventing thermal runaway and reducing the size requirements of the cooling system.

How should the gate drive be configured for the Trenchstop IGBT3 technology?
Designers should utilize a Gate Drive capable of providing sufficient peak current to manage the gate charge of a 1000A die. Proper Miller Clamp implementation is recommended to prevent parasitic turn-on in the high-voltage IHM-B environment, where dV/dt levels are inherently high.

Key Parameter Overview

Decoding the Specs for Enhanced Thermal Reliability

The following technical data is derived from official documentation to assist in your FZ1000R33HE3 evaluation process. Precise values for switching losses and thermal resistance are critical for calculating total system efficiency.

Download the FZ1000R33HE3 datasheet for detailed specifications and performance curves.

Technical Deep Dive

A Closer Look at the IHM-B Package for Long-Term Reliability

The engineering of the FZ1000R33HE3 goes beyond the silicon. The IHM-B package is specifically designed for modularity and high-current handling. By utilizing a single IGBT configuration, engineers can achieve higher current scaling through IGBT Paralleling without the complex layout issues associated with smaller, multi-pack modules. A critical aspect of this design is the Thermal Resistance management. In high-power systems, Rth(j-c) is the bottleneck of performance. For more insight on these parameters, see our guide on Why Rth Matters.

The internal Emitter is designed as a Kelvin Emitter, which separates the power circuit from the gate-control circuit. This prevents the high-current emitter voltage drops from interfering with the gate-to-emitter control signal. This precision is analogous to using a separate signal wire in a high-fidelity audio system to eliminate noise interference, ensuring the Trenchstop IGBT3 switches cleanly even at 1000A.

Application Scenarios & Value

Achieving System-Level Benefits in High-Voltage Conversion

The FZ1000R33HE3 is primarily found in Solar Inverter central stations and grid-level converters where reliability cannot be compromised. In these scenarios, the module acts as the primary switch in the DC-to-AC conversion stage. For engineers designing Variable Frequency Drive (VFD) units for mining or heavy pumping, the module's 3300V rating allows for direct connection to higher voltage lines, reducing the need for step-down transformers and simplifying the overall System Integration. This is further explored in our analysis of the core trio of IGBT selection.

In Electric Vehicle (EV) infrastructure, specifically high-speed rail traction, the FZ1000R33HE3 handles the immense surge currents required during locomotive startup. For systems requiring even higher current handling, the related FZ1500R33HE3 offers a Vces of 3300V with a higher current rating of 1500A. Conversely, for 1700V systems, the FZ1200R17HE4 provides an alternative power-to-voltage ratio.

Choosing the FZ1000R33HE3 means prioritizing the strategic stability of your high-power architecture. By selecting a module with an AlSiC base plate and 10.2kV isolation, you are not merely choosing a switch; you are implementing a long-term reliability insurance policy for your industrial or traction assets. As global power requirements move toward higher efficiency and higher voltages, these standardized IHM-B solutions remain the backbone of the energy transition.