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Infineon FP26R12W2T4_B11 IGBT Module

#Infineon, #FP26R12W2T4_B11, #IGBT_Module, #IGBT, EasyPIM™ module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC / pre-applied Thermal Interface Mat

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$
· Date Code: 2022+
. Available Qty: 204
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FP26R12W2T4_B11 Specification

Sell FP26R12W2T4_B11, #Infineon #FP26R12W2T4_B11 Stock, EasyPIM™ module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC / pre-applied Thermal Interface Material 1200V / 50A, #IGBT_Module, #IGBT, #FP26R12W2T4_B11
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/fp26r12w2t4_b11.html

Typical Applications

Auxiliary inverters

• Air conditioning

• Motor drives

Electrical Features

• Low switching losses

• Low VCEsat

• Trench IGBT4

• VCEsat with positive temperature coefficient

MechanicalFeatures

• Al2O3 substrate with low thermal resistance

• Compact design

• Solder contact technology

• Rugged mounting due to integrated mounting clamps

• Pre-appliedThermalInterfaceMaterial

.Absolute maximum ratings (Tc=25°C unless without specified)

Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C VCES 1200 V

Kollektor-Dauergleichstrom Continuous DC collectorcurrent TH = 90°C, Tvj max = 175°C IC nom 25 A

Periodischer Kollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 50 A

Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES +/-20 V

Temperaturim Schaltbetrieb Temperature under switching conditions Tvj op -40~150 °C

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