Name: MITSUBISHI CM400HG-66H IGBT_Module
Brand: MITSUBISHI
SKU: CM400HG-66H
Price: 155 USD
Availability: InStock

#MITSUBISHI, #CM400HG_66H, #IGBT_Module, #IGBT, CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 400A 3300V

· Categories: IGBT Module

· Manufacturer: MITSUBISHI

· Price: US$ 155

· Date Code: 2024+

. Available Qty: 350

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Tags: 3300v 400a cm400 hvight mitsubishi

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CM400HG-66H Specification

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CM400HG-66H

HIGH POWER SWITCHING USE INSULATED TYPE

IC ...................................................................400A

VCES .......................................................3300V

High Insulated Type

1-element in a Pack

AISiC Baseplate

VCES (Collector-emitter voltage): 3300V (VGE=0V, Tj=25°C)

VGES (Gate-emitter voltage): ±20V (VCE=0V, Tj=25°C)

IC (Collector current): TC=90°C: 400A

ICM (Peak Collector current): Pulse (Note 1): 800A

IE (Emitter current): (Note 2): 400A

IEM (Peak Emitter current): Pulse (Note 1): 800A

PC (Maximum power dissipation): Tc =25°C, IGBT part (Note 3): 4100W

Tj (Junction temperature): -40~+150°C

Top (Operating temperature): -40~+125°C

Tstg (Storage temperature): -40~+125°C

Viso (Isolation voltage): RMS, sinusoidal, f =60Hz, t=1min.: 10200V

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MITSUBISHI CM400HG-66H IGBT Module

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CM400HG-66H Specification

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