CM400HG-66H
HIGH POWER SWITCHING USE INSULATED TYPE
IC ...................................................................400A
VCES .......................................................3300V
High Insulated Type
1-element in a Pack
AISiC Baseplate
- VCES (Collector-emitter voltage): 3300V (VGE=0V, Tj=25°C)
- VGES (Gate-emitter voltage): ±20V (VCE=0V, Tj=25°C)
- IC (Collector current): TC=90°C: 400A
- ICM (Peak Collector current): Pulse (Note 1): 800A
- IE (Emitter current): (Note 2): 400A
- IEM (Peak Emitter current): Pulse (Note 1): 800A
- PC (Maximum power dissipation): Tc =25°C, IGBT part (Note 3): 4100W
- Tj (Junction temperature): -40~+150°C
- Top (Operating temperature): -40~+125°C
- Tstg (Storage temperature): -40~+125°C
- Viso (Isolation voltage): RMS, sinusoidal, f =60Hz, t=1min.: 10200V
