Mitsubishi CM800HB-66H | High-Voltage 3300V IGBT for Demanding Power Systems
The Mitsubishi CM800HB-66H is a high-performance single IGBT module engineered for the rigorous demands of high-power, medium-voltage conversion systems. As a cornerstone of Mitsubishi's H-Series lineup, this device leverages advanced trench gate and CSTBT™ (Carrier Stored Trench Bipolar Transistor) technology to deliver a superior balance of high blocking voltage, significant current handling, and low conduction losses. It is specifically designed for applications where operational reliability and efficiency are non-negotiable.
- High Blocking Voltage: With a collector-emitter voltage (Vces) of 3300V, it enables the design of simpler, more efficient medium-voltage inverter topologies.
- Substantial Current Capacity: A continuous collector current (Ic) rating of 800A provides the power handling capability required for multi-megawatt systems.
- Optimized for Low Conduction Loss: The low Vce(sat) of 3.3V (typical) minimizes power dissipation, reducing thermal management requirements and improving overall system efficiency.
- Robust Mechanical Design: Housed in an industry-standard package with an isolated baseplate, ensuring high reliability and simplified thermal interfacing.
Technical Deep Dive: Engineering for High-Voltage Stability and Efficiency
The standout feature of the CM800HB-66H is its 3300V blocking capability. This high voltage rating is critical for applications connected to medium-voltage grids, as it allows designers to reduce the number of series-connected components. This simplification not only shrinks the overall system footprint but also enhances reliability by minimizing potential failure points. The device's excellent SOA (Safe Operating Area) characteristics ensure stable operation even under the stressful conditions inherent in high-voltage switching, providing a crucial margin of safety for mission-critical equipment.
At its core, the CM800HB-66H utilizes Mitsubishi's proprietary CSTBT™ technology. This advanced silicon structure optimizes the carrier concentration within the drift layer, achieving a remarkably low collector-emitter saturation voltage (Vce(sat)) for its voltage class. For the system engineer, this translates directly into lower conduction losses, which is the dominant loss factor in high-current applications. Lower losses mean less heat generated, enabling more compact heatsink designs and potentially higher power density. This focus on efficiency is a key aspect of modern power electronic design, which you can explore further in our guide to IGBT modules as the backbone of high-efficiency systems.
Application Focus: Powering the Next Generation of Industrial and Grid Infrastructure
The unique combination of high voltage and high current makes the Mitsubishi CM800HB-66H an ideal solution for a range of demanding applications.
In traction and propulsion systems for rail and heavy electric vehicles, this IGBT module provides the robust power switching necessary for main inverters. Its high voltage rating matches the requirements of modern light rail and locomotive power chains, delivering efficient and reliable control of traction motors.
For grid-scale renewable energy, such as large wind turbine converters and central solar inverters, the CM800HB-66H serves as a powerful building block. Its 800A capacity allows it to handle the immense power flows from multi-megawatt turbines and solar arrays, ensuring efficient conversion from DC to grid-compliant AC power. Its counterpart, the CM800HA-66H, offers a chopper configuration for different power conversion stages within the same ecosystem.
In the industrial sector, it is perfectly suited for high-power Variable Frequency Drives (VFDs) controlling large motors in mining, marine propulsion, and heavy manufacturing. These applications often rely on medium-voltage supplies, where the 3.3kV rating of the CM800HB-66H simplifies the inverter front-end design and enhances system durability.
Key Technical Parameters
Below is a summary of the critical electrical and thermal characteristics for the CM800HB-66H. For a comprehensive overview, engineers should consult the official product datasheet. You can download the datasheet here for complete specifications and performance curves.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vces) | 3300V |
| Collector Current (Ic) @ Tc=80°C | 800A |
| Collector-Emitter Saturation Voltage (Vce(sat)) (typ.) @ Ic=800A | 3.3V |
| Gate-Emitter Voltage (Vges) | ±20V |
| Thermal Resistance (Junction to Case, Rth(j-c)) per IGBT | 0.019 °C/W |
| Maximum Junction Temperature (Tj max) | 150°C |
Strategic Advantage in Medium-Voltage Power Conversion
The industry trend towards higher DC bus voltages in power conversion is driven by the fundamental need to improve efficiency and power density. By moving to higher voltages, designers can reduce current for the same power level, significantly cutting down on I²R losses in cabling and busbars. The Mitsubishi CM800HB-66H is not just a component; it is an enabler of this strategic shift. Its availability provides a proven, reliable solution for developing next-generation inverters and converters that are more compact, efficient, and cost-effective over their operational lifetime. For engineers looking to push the boundaries of power electronics, understanding the future role of IGBTs is paramount, and devices like the CM800HB-66H are leading the way. If your project requires this level of performance, please do not hesitate to contact our technical team for selection support.
