Mitsubishi CM450DXP-24T IGBT Module

Manufacturer: Mitsubishi
Product Category: IGBT Modules
RoHS: RoHS compliant
Product: IGBT Silicon Modules
Configuration: Dual
Collector-Emitter Voltage (VCEO Max): 1.2 kV (1200V)
Collector-Emitter Saturation Voltage: 1.65V
Continuous Collector Current at 25°C: 450A
Gate-Emitter Leakage Current: 500 nA (nanoamperes)
Power Dissipation (Pd): 2.5 kW (kilowatts)
Minimum Operating Temperature: -40°C
Maximum Operating Temperature: +150°C
Maximum Gate Emitter Voltage: 20V
Mounting Style: Screw
Brand: Mitsubishi Electric
Technology: Silicon (Si)