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Toshiba MG100H2CK1 IGBT Module

Toshiba's MG100H2CK1 is a robust 600V/100A dual IGBT module. Low VCE(sat) ensures high efficiency and reliability, simplifying half-bridge designs for industrial motor drives and power supplies.

· Categories: IGBT Module
· Manufacturer: Toshiba
· Price: US$ 31
· Date Code: 2021+
. Available Qty: 349
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MG100H2CK1 Specification

MG100H2CK1 | 600V 100A Dual IGBT Module | Toshiba

Engineering Analysis of the MG100H2CK1 IGBT Module

Content last revised on October 6, 2025.

A Distributor's Technical Review

The Toshiba MG100H2CK1 is a robust 600V/100A dual IGBT module offering a balanced combination of low conduction losses and reliable switching performance for industrial applications. Integrating two IGBTs and two free-wheeling diodes into a single, isolated package, this component provides a streamlined solution for building compact and efficient half-bridge power stages. Key specifications include: 600V | 100A | VCE(sat) 2.7V (max). The module’s design delivers the core benefits of a simplified half-bridge topology and performance optimized for medium-frequency switching. For engineers evaluating this module for motor drives, its 100A current rating and integrated freewheeling diodes provide a powerful and effective solution for controlling three-phase induction motors. Best fit for cost-sensitive industrial motor drives and power supplies up to 40kW requiring proven reliability over ultra-high frequency operation.

Key Parameter Overview

Decoding the Electrical & Thermal Specifications for System Design

The technical specifications of the MG100H2CK1 are foundational to its performance in high-power systems. The values presented below are extracted from the official datasheet and grouped by function to facilitate engineering evaluation for power circuit design and thermal management.

Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCES 600 V
Gate-Emitter Voltage VGES ±20 V
Collector Current (DC) IC 100 A
Collector Current (1ms) ICP 200 A
Collector Power Dissipation (Tc=25°C) PC 450 W
Operating Junction Temperature Tj -40 to +150 °C
Electrical Characteristics (Ta=25°C)
Parameter Symbol Condition Max. Unit
Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V 2.7 V
Gate-Emitter Leakage Current IGES VGE = ±20V 0.5 μA
Collector Cut-Off Current ICES VCES = 600V 1.0 mA
Diode Forward Voltage VF IF = 100A 2.5 V
Turn-On Time ton IC = 100A, VCC=300V 0.3 (Typ.) μs
Fall Time tf 0.3 (Typ.)
Turn-Off Time toff 1.0 (Typ.)
Thermal and Isolation Characteristics
Parameter Symbol Value Unit
Thermal Resistance (Junction-to-Case, IGBT) Rth(j-c) 0.28 °C/W
Thermal Resistance (Junction-to-Case, Diode) Rth(j-c) 0.42 °C/W
Isolation Voltage VISOL 2500 (AC, 1 min.) V

Application Scenarios & Value

System-Level Benefits in Industrial Motor Drives and Power Converters

The MG100H2CK1 is engineered for classic high-power switching applications where reliability and performance are paramount. Its primary domain is in three-phase Variable Frequency Drives (VFDs) for industrial motors. In a VFD, a key engineering challenge is balancing efficiency across different operating conditions. What is the impact of VCE(sat)? The module's maximum Collector-Emitter Saturation Voltage of 2.7V directly addresses this by minimizing conduction losses—the energy lost as heat when the IGBT is fully on. This is analogous to the pressure drop across a fully open valve; a lower drop means less energy wasted. This efficiency is critical during steady-state motor operation, reducing the thermal load on the heatsink and improving overall system reliability.

Beyond VFDs, this module is also well-suited for Uninterruptible Power Supplies (UPS), welding power supplies, and induction heating systems. The integrated half-bridge configuration, containing both the high-side and low-side switches for one inverter leg, significantly simplifies the power stage layout. This integration reduces component count and minimizes parasitic inductance, which in turn mitigates harmful voltage overshoots during switching. For applications demanding higher power output, the 2MBI200VA-060 provides double the current handling capability within the same voltage class.

Technical Deep Dive

Analyzing the 2-in-1 Module Construction for Enhanced Reliability

The design of the MG100H2CK1 as a "2-in-1" or half-bridge module offers distinct engineering advantages over using discrete components. By co-packaging two IGBT dies and their corresponding anti-parallel freewheeling diodes onto a common, electrically isolated baseplate, the module's internal layout is optimized to reduce stray inductance. Stray inductance in a power circuit can be compared to the 'water hammer' effect in plumbing; just as abruptly stopping water flow in a long pipe causes a damaging pressure spike, rapidly switching off current in a circuit with long conductor paths creates a significant voltage overshoot. This overshoot can exceed the IGBT's voltage rating and lead to failure.

The compact internal connections of the MG100H2CK1 minimize this effect, protecting the silicon and improving the device's Safe Operating Area (SOA). This inherent robustness is critical for ensuring long-term operational reliability, especially in systems that utilize fast Pulse Width Modulation (PWM) signals to control motor speed or power delivery. The result is a more reliable and electromagnetically quieter system that simplifies the design of external snubber circuits, saving both board space and component cost.

Frequently Asked Questions

Engineering Questions on the MG100H2CK1's Performance

How does the maximum VCE(sat) of 2.7V impact the thermal design for an application running near the 100A limit?
At 100A, a VCE(sat) of 2.7V results in 270W of conduction loss per switch during its on-time. This value is a critical input for calculating the required heatsink performance. Using the module's thermal resistance (Rth(j-c) = 0.28 °C/W), engineers can accurately model the junction temperature to ensure it remains well below the 150°C maximum, thereby ensuring system reliability and preventing thermal runaway.

What is the primary advantage of the 2500V isolated baseplate in a multi-module inverter setup?
The main benefit is simplified mechanical assembly and thermal design. It allows three of these modules (for a three-phase inverter) to be mounted directly onto a single, common, non-isolated heatsink. This eliminates the need for separate, fragile insulating pads for each module, which not only reduces assembly complexity and cost but also improves thermal transfer efficiency by removing an extra layer in the thermal path.

The datasheet refers to this as a "GTR Module." Is it a BJT or an IGBT, and what does that mean for the gate drive design?
While the "GTR" (Giant Transistor) designation is a legacy term often associated with Bipolar Junction Transistors (BJTs), the MG100H2CK1 is functionally an Insulated Gate Bipolar Transistor (IGBT). This is confirmed by its insulated gate terminal (Gate-Emitter) and its voltage-controlled characteristics. Unlike a current-controlled BJT, the MG100H2CK1 is switched by applying a voltage (typically +15V) to the gate, requiring a dedicated gate driver IC. The ±20V VGES rating is a standard specification for IGBTs of this class.

System Integration & Next Steps

For engineers and procurement managers evaluating the MG100H2CK1 for use in industrial power systems, the key takeaway is its proven design that balances performance, cost, and reliability. Its straightforward integration, robust thermal characteristics, and well-defined switching parameters make it a dependable choice for a wide range of applications. For detailed quoting, availability, or to discuss the specific requirements of your power conversion project, please contact our technical support team for further assistance.

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