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TOSHIBA MG50H2YS1 New IGBT Module

#TOSHIBA, #MG50H2YS1, #IGBT_Module, #IGBT, MG50H2YS1 is High Power Switching Application 500V 100A

· Categories: IGBT Module
· Manufacturer: TOSHIBA
· Price: US$
· Date Code: 2023+
. Available Qty: 420
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MG50H2YS1 Specification

Sell MG50H2YS1, #TOSHIBA #MG50H2YS1 New Stock, MG50H2YS1 is High Power Switching Application 500V 100A, #IGBT_Module, #IGBT, #MG50H2YS1
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URL: https://www.slw-ele.com/mg50h2ys1.html

Toshiba MG50H2YS1, which appears to be a power semiconductor device designed for high-power switching and motor control applications. Here's an explanation of the specifications and features:

Features:

  • High Input Impedance:

    • This indicates that the device has a high input impedance, which can make it easier to drive with low-power control signals.

  • High Speed:

    • Switching speed is critical in many applications. The specified values for tf (fall time) and trr (reverse recovery time) indicate fast switching characteristics.
    • tf (fall time): 1.0μs (maximum)
    • trr (reverse recovery time): 0.5μs (maximum)

  • Low Saturation Voltage:

    • VCE(sat) (Collector-Emitter saturation voltage) is specified as 5.0V (maximum). This indicates that the device exhibits low voltage drop when it's in the on state, which is important for minimizing power losses.

  • Enhancement-Mode:

    • Enhancement-mode typically refers to a type of field-effect transistor (FET) or power semiconductor device. It suggests that this device operates in an enhancement mode, where it's normally off and requires a gate signal to turn on.

  • Complete Half Bridge in One Package:

    • This device seems to include a complete half-bridge configuration in a single package. A half-bridge is a common configuration for driving motors and other loads.

  • Electrodes Isolated from Case:

    • This feature ensures that the electrical connections (electrodes) are electrically isolated from the device's case for safety and protection purposes.

  • Maximum Ratings and Characteristics:

  • Collector-Emitter Voltage (VCE): 500V

    • This is the maximum voltage that can be applied across the collector and emitter terminals.

  • Gate-Emitter Voltage (VGES): ±20V

    • This represents the maximum voltage range that can be applied across the gate and emitter terminals.

  • Collector Current (Ic):

    • DC (Continuous): 50A
    • 1ms Pulsed: 100A
    • These values indicate the maximum current that the device can handle under different operating conditions.

  • Collector Power Dissipation (PC): 300W

    • This is the maximum power dissipation the device can handle. Exceeding this rating can lead to overheating and damage.

  • Junction Temperature (Tj): 150°C

    • This is the maximum operating junction temperature for the device.

  • Storage Temperature Range (Tstg): -40°C to 125°C

    • These are the recommended storage temperature limits for the device when it's not in use.

  • Isolation Voltage (Visol): 2500V (AC, 1 Minute)

    • This represents the isolation voltage between different parts of the device and is important for safety and protection.

  • Screw Torque (Terminal/Mounting): 30/30 kg·cm

    • These values indicate the recommended torque for securing the device's terminals and mounting it.

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