#MG150J7KS50.The electrodes are isolated from case.
.High input impedance
.7 IGBTs built into 1 package.
.Enhancement-mode
.High speed type IGBT : Inverter stage
: VCE(sat) = 2.8V (max) (@IC = 150A)
: tf = 0.5μs (max) (@IC = 150A)
: trr = 0.3μs (max) (@IF = 150A)
.Outline :Toshiba 2-110A1B
.Weight: 520g
Collector-emitter voltage VCES 600 V
Gate-emitter voltage VGES ±20 V
Collector current DC IC 150 A
Collector current 1ms Icp 300 A
Collector power dissipation (Tc = 25°C) PC 320 W
Junction temperature Tj150 °C
Storage temperature range Tstg−40 ~ 125 °C
Isolation voltage VIsol2500 (AC 1 min.) V
Screw torque (Terminal / mounting) 3/3 N.m
High Power Switching Applications Motor Control Applications 150A/600V/IGBT/7U
