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Semikron SKM150GB12V IGBT Module

SEMIKRON SKM150GB12V: A 1200V/150A IGBT module. Features low 0.16 K/W thermal resistance in a SEMITRANS 2 package for superior thermal stability and long-term system reliability.

· Categories: IGBT Module
· Manufacturer: Semikron
· Price: US$ 35
· Date Code: 2022+
. Available Qty: 274
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SKM150GB12V Specification

SKM150GB12V | 1200V IGBT for Thermally Stable Systems

An Engineering Overview of the SEMIKRON SKM150GB12V

In demanding industrial environments, the consistent operation of a motor drive or UPS is not just a feature—it's the bedrock of productivity. The SEMIKRON SKM150GB12V, a SEMITRANS® 2 IGBT Module, is engineered to deliver sustained operational integrity and thermal stability for these high-uptime power conversion systems. With core specifications of 1200V, 150A nominal current, and a low thermal resistance of 0.16 K/W (junction-to-case for the IGBT), this module provides exceptional thermal headroom and improved system longevity. Its combination of low conduction losses and a thermally efficient SEMITRANS 2 package offers the stability needed to handle demanding, cyclical loads in motor drives without compromising long-term reliability.

Deployment Snapshot: Ensuring Uptime in Demanding Environments

Consider a multi-axis CNC machining center where spindle drive reliability directly impacts production throughput and precision. System integrators often face challenges with power modules that exhibit thermal degradation under high-frequency, cyclical loads, leading to unplanned downtime. By incorporating a module built on a thermally efficient platform like the SKM150GB12V, with its direct-bonded copper (DBC) baseplate, manufacturers can achieve significantly lower junction temperatures. This design choice translates directly to a measurable increase in the mean time between failures (MTBF), safeguarding production schedules and reducing lifecycle service costs.

Anatomy of Thermal Stability and Electrical Robustness

A component's true value is revealed in its design details. The SKM150GB12V achieves its reliability through a synthesis of advanced chip technology and robust packaging. What is a key feature of the SEMITRANS 2 package? Its insulated copper baseplate ensures superior thermal transfer and electrical isolation.

  • SEMITRANS® 2 Package: This industry-standard housing features an insulated copper baseplate that establishes a direct, low-resistance path for heat to escape from the IGBT and diode chips to the heatsink. This construction simplifies assembly by removing the need for external insulating foils, which can introduce thermal inconsistencies.
  • CAL4 Diode Technology: The module incorporates a 4th generation CAL (Controlled Axial Lifetime) freewheeling diode. This diode is engineered for soft recovery characteristics, which minimizes voltage overshoots and high-frequency oscillations during switching. This electrical gentleness reduces electromagnetic interference (EMI) and places less stress on the IGBT, contributing to a more durable system.
  • Low Conduction Losses: With a typical collector-emitter saturation voltage (VCE(sat)) of 2.2V at its nominal current and a junction temperature of 150°C, the module minimizes power lost as heat during operation. Think of this as reducing friction; a lower VCE(sat) means less thermal energy is generated for the same current, simplifying the overall thermal management strategy.

Core Specifications for System Longevity

This table highlights the key parameters that enable the SKM150GB12V to deliver durable performance. These figures are essential for accurate system modeling and reliability projections. Download the official datasheet for a complete list of specifications.

Parameter Value Conditions
Collector-Emitter Voltage (VCES) 1200 V Tj = 25 °C
Nominal Collector Current (ICnom) 150 A -
Collector-Emitter Saturation Voltage (VCE(sat)) 2.2 V (typ.) IC = 150 A, Tj = 150 °C
Thermal Resistance, Junction-to-Case (Rth(j-c)), IGBT 0.16 K/W Per IGBT
Thermal Resistance, Junction-to-Case (Rth(j-c)), Diode 0.33 K/W Per Diode
Maximum Operating Junction Temperature (Tj op max) 175 °C -

Application Focus: Where Thermal Headroom Creates Value

The technical attributes of the SEMIKRON SKM150GB12V make it a strong candidate for applications where long-term performance under thermal stress is a primary design consideration.

  • AC Inverter Drives: The module's capacity for increased power cycling and efficient heat dissipation makes it well-suited for the variable loads and torque demands of modern Variable Frequency Drives (VFDs).
  • Uninterruptible Power Supplies (UPS): In UPS systems, reliability is the most critical metric. The robust SEMITRANS package and soft-switching CAL diode contribute to a longer operational lifespan, protecting critical infrastructure.
  • Electronic Welding Systems: Welding applications generate intense thermal pulses. The module's low thermal resistance allows it to effectively manage these heat spikes, ensuring consistent weld quality and equipment durability.

For industrial drives up to approximately 75 kW, the SKM150GB12V's Rth(j-c) of 0.16 K/W offers a definitive thermal advantage for designs prioritizing operational margin and longevity. What makes the SKM150GB12V suitable for UPS systems? Its design focuses on long-term reliability and thermal stability.

Strategic Implications: Building Systems with Lower Lifecycle Costs

Selecting a power module extends beyond matching voltage and current ratings; it's a strategic decision impacting total cost of ownership (TCO). The reliability engineered into the SKM150GB12V translates into tangible economic benefits. Its superior thermal performance can enable designers to specify smaller, more cost-effective heatsinks or reduce fan requirements, lowering both bill of materials (BOM) cost and system complexity. Furthermore, the enhanced durability reduces the frequency of field service and replacement, a critical factor in industrial automation and remote installations where downtime carries significant financial penalties. For a deeper understanding of failure modes, explore our guide on IGBT failure analysis.

Data for Decision-Making: A Comparative Parameter Overview

To empower your component evaluation process, this section provides a factual comparison with a device in a similar class. The choice between modules often involves weighing trade-offs between conduction efficiency, thermal characteristics, and mechanical integration. For systems requiring higher current handling, the related SKM200GB128D offers a clear path for scalability within the same module family. The following data is presented to support an informed engineering decision.

Parameter SEMIKRON SKM150GB12V Comparable Module (e.g., FS150R12KT4)
Voltage Class (VCES) 1200 V 1200 V
Nominal Current (ICnom) 150 A 150 A
VCE(sat) (typ. @ 150°C) 2.2 V ~2.05 V
Rth(j-c) IGBT (max) 0.16 K/W ~0.17 K/W
Package SEMITRANS 2 EconoPACK™ 3

A Foundation for Future-Ready Power Systems

As industrial systems evolve towards greater autonomy and efficiency, the demand for components that guarantee higher uptime and lower energy waste will only intensify. Specifying a power module like the SKM150GB12V is a step toward this future. Its foundation of excellent thermal management and electrical robustness, provided by a manufacturer like Semikron Danfoss, allows engineers to build power conversion platforms that are not only performant on day one but remain dependable throughout a long service life. This focus on lifecycle reliability is a key enabler for creating more sustainable and cost-effective industrial machinery and energy systems.

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