SK35GD12T4 Datasheet | 1200V 50A IGBT for Efficient Drives
An Engineering Overview of the SEMITRANS 2 IGBT Module
The SK35GD12T4 is a 1200V half-bridge IGBT module engineered for superior switching efficiency through its advanced Trench 4 IGBT and CAL 4F diode technology. It delivers a robust performance profile with key specifications of 1200V | 50A (@ 25°C) | VCE(sat) 1.7V (typ). The primary engineering benefits include significantly lower total power losses and enhanced system power density. This design directly addresses how to improve overall system efficiency by minimizing both conduction and switching energy dissipation, a critical factor in modern power conversion systems.
Industry Insights & Strategic Advantage
Efficiency Standards and the Role of Advanced IGBTs
In an industrial landscape driven by stringent energy efficiency mandates, such as the IE3 and IE4 standards for electric motors, the performance of power conversion electronics is under intense scrutiny. The SK35GD12T4 directly supports these objectives by integrating core technologies aimed at loss reduction. The module's Trench Field-Stop IGBT 4 (T4) technology, combined with a CAL 4F (Controlled Axial Lifetime) free-wheeling diode, provides a sophisticated solution for designers of Variable Frequency Drives (VFDs), solar inverters, and uninterruptible power supplies. By minimizing wasted energy as heat, systems built around this module can achieve higher efficiency ratings, reduce operational expenditures, and contribute to broader sustainability goals.
Success Stories / Deployment Snippets
Deployment Spotlight: Enhancing VFD Performance
In a typical application involving a 15 kW industrial motor drive, the integration of the SK35GD12T4 resulted in a measurable decrease in total power losses compared to previous-generation IGBTs. The low saturation voltage and optimized switching characteristics allowed for a 10% reduction in the required heatsink volume, simplifying the mechanical design and lowering bill-of-materials costs. This efficiency gain was particularly evident under partial load conditions, which is a common operating state for many industrial drives. The module’s performance enabled the end product to more easily meet demanding energy efficiency targets without compromising on reliability.
Technical Deep Dive
Inside the SK35GD12T4: A Focus on Loss Reduction
The core of the SK35GD12T4's performance lies in its synergistic combination of advanced silicon technologies. What is the benefit of Trench 4 IGBT technology? It optimizes the delicate balance between conduction losses (VCE(sat)) and switching losses (Eon/Eoff), resulting in higher operational efficiency across a wide range of frequencies. This is not just about a single parameter but the total energy dissipated during a full switching cycle.
Complementing the IGBT is the CAL 4F diode. Its "soft" recovery characteristic is crucial for reducing voltage overshoots and electromagnetic interference (EMI). This allows engineers to potentially simplify or shrink the required snubber and filter circuits, saving space and cost. How does the CAL 4F diode improve performance? It provides soft, fast recovery, which minimizes turn-on losses in the IGBT and lowers system-level EMI, contributing to a cleaner power output and easier regulatory compliance.
Intra-Series Comparison & Positioning
Positioning the SK35GD12T4 in the SEMITRANS® 2 Portfolio
Within the SEMIKRON SEMITRANS® 2 family, the SK35GD12T4 is positioned as a versatile, mid-power half-bridge solution for 1200V applications. It provides a balanced performance profile ideal for designs where neither conduction nor switching losses are exclusively dominant, such as in motor drives operating with switching frequencies between 4 kHz and 12 kHz. It serves as a foundational building block for creating compact and efficient three-phase inverters. For systems requiring higher current handling in the same voltage class and package, the related SKM100GB12T4 offers an increased current rating.
Key Parameter Overview
Performance Metrics for Efficiency Modeling
Accurate system-level evaluation relies on a clear understanding of key datasheet parameters. The SK35GD12T4's specifications are tailored to facilitate precise thermal and electrical modeling. For an in-depth guide on interpreting these values, refer to our article on Decoding IGBT Datasheets.
- Collector-Emitter Saturation Voltage (VCE(sat)): With a typical value of 1.7V at its nominal current (35A), this parameter is a primary indicator of conduction losses. A lower VCE(sat) means less power is dissipated as heat when the IGBT is fully on, directly boosting the efficiency of the power stage.
- Thermal Resistance (Rth(j-c)): This value, specified per switch, is crucial for effective thermal design. The Rth(j-c) can be thought of as the width of a highway for heat trying to escape the semiconductor junction. The low thermal resistance of the SK35GD12T4 ensures an efficient pathway for heat to transfer to the heatsink, which is fundamental to maintaining reliability and achieving high power density.
- Switching Energies (Eon, Eoff): These values quantify the energy lost during the turn-on and turn-off transitions. The Trench 4 technology is optimized to keep these energies low, which is especially critical in applications with higher switching frequencies, as these losses are directly proportional to the operating frequency.
| Parameter | Symbol | Condition | Value |
|---|---|---|---|
| Collector-Emitter Voltage | Vces | - | 1200 V |
| Continuous Collector Current | Ic | Tc = 25 °C | 50 A |
| Nominal Collector Current | ICnom | - | 35 A |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC = 35 A, VGE = 15 V, Tj = 25 °C | 1.70 V (typ.) |
| Gate-Emitter Threshold Voltage | VGE(th) | IC = 1.4 mA | 5.8 V (typ.) |
| Parameter | Symbol | Condition | Value |
|---|---|---|---|
| Thermal Resistance, Junction to Case | Rth(j-c) | per IGBT | 0.6 K/W (max.) |
| Operating Junction Temperature | Tj op | - | -40 to +150 °C |
| Isolation Voltage | Visol | AC, 1 min. | 2500 V |
Download the Datasheet for complete specifications and performance curves.
Application Scenarios & Value
Power Conversion Systems Where Efficiency is Paramount
The SK35GD12T4 is well-suited for a range of power conversion applications where a balance of performance, efficiency, and reliability is essential. Its robust thermal and electrical characteristics make it a strong candidate for new designs as well as for upgrading existing systems to achieve higher performance levels. The underlying technology directly supports the creation of more compact and energy-efficient power electronics.
Primary Applications Include:
- Industrial Motor Drives (AC Inverters)
- Uninterruptible Power Supplies (UPS)
- Solar and Wind Power Inverters
- Welding Power Supplies
- Switched Mode Power Supplies (SMPS)
Best Fit: For AC motor drives up to 15 kW, the SK35GD12T4's low Vce(sat) of 1.7V makes it a superior choice for achieving high partial-load efficiency.
For your next power stage design, consider how the documented low-loss characteristics of the SK35GD12T4 can help you meet your project's efficiency and thermal management targets. A thorough review of the datasheet will provide the necessary data for detailed loss simulations and system optimization.
