Content last revised on November 13, 2025
Semikron SEMIX151GD12E4 | High-Efficiency 1200V Trench Gate IGBT Module
The SEMIX151GD12E4 is a high-performance half-bridge IGBT module from Semikron, engineered for demanding power conversion applications. Integrating advanced Trench Gate IGBTs and Controlled Axial Lifetime (CAL) freewheeling diodes, this module delivers an optimal balance of low conduction and switching losses. It is housed in the robust SEMiX 13 package, which features spring contacts for reliable, solder-free driver PCB mounting. This design ensures enhanced thermal performance and electrical reliability, making the SEMIX151GD12E4 an ideal solution for high-power motor drives, uninterruptible power supplies (UPS), and renewable energy systems where efficiency and long-term stability are critical engineering requirements.
Leveraging Semikron's established expertise in power electronics, this module provides a dependable foundation for compact and efficient inverter designs. Its architecture is tailored to minimize stray inductance and facilitate straightforward integration, reducing development time and improving overall system performance. For engineers designing systems in the multi-kilowatt range, the SEMIX151GD12E4 offers a compelling combination of power density, reliability, and advanced technological features.
Key Engineering Parameters
The following table outlines the critical performance specifications for the SEMIX151GD12E4. These parameters are essential for accurate system design, simulation, and thermal management. For a comprehensive list of characteristics and application notes, please refer to the official documentation.
| Parameter | Symbol | Value | Conditions |
|---|---|---|---|
| Collector-Emitter Voltage | Vces | 1200 V | Tj = 25 °C |
| Continuous DC Collector Current | Ic | 232 A | Tc = 25 °C, Tj = 175 °C |
| Continuous DC Collector Current | Ic | 170 A | Tc = 80 °C, Tj = 175 °C |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.8 V (typ.) / 2.25 V (max.) | Ic = 150 A, Vge = 15 V, Tj = 25 °C |
| Gate-Emitter Threshold Voltage | VGE(th) | 5.8 V | Ic = 6.0 mA, Vce = Vge, Tj = 25 °C |
| Total Power Dissipation per IGBT | Ptot | 1000 W | Tc = 25 °C, Tj = 175 °C |
| Short Circuit Withstand Time | tsc | 10 µs | Vge ≤ 15 V, Vcc = 800 V, Tj = 150 °C |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.125 K/W | per IGBT |
| Maximum Junction Temperature | Tjmax | 175 °C | |
| Case Temperature Range | Tc | -40 to 125 °C |
Technical Deep Dive: Trench Gate and CAL Diode Technology
The superior performance of the SEMIX151GD12E4 is rooted in two core Semikron technologies. First, the use of Trench Gate IGBTs fundamentally reduces the collector-emitter saturation voltage (VCE(sat)). Unlike planar gate structures, the trench gate creates a vertical channel for current flow, increasing cell density and significantly lowering on-state resistance. This directly translates to lower conduction losses, a critical factor in high-current applications like motor drives, leading to higher system efficiency and reduced heat dissipation requirements.
Second, the module incorporates co-packed CAL (Controlled Axial Lifetime) freewheeling diodes. This technology is designed to achieve a "soft" reverse recovery characteristic. A soft recovery minimizes voltage overshoots and oscillations during diode turn-off, which reduces electromagnetic interference (EMI) and lessens the stress on the IGBT. This engineered softness, combined with low reverse recovery charge (Qrr), curtails switching losses and enhances the module's robustness, particularly in hard-switched inverter topologies. The positive temperature coefficient of VCE(sat) also simplifies the process of paralleling modules for higher power output.
Application Scenarios and Engineering Value
The SEMIX151GD12E4 is engineered to solve specific challenges across various high-power applications:
- AC Inverter Drives: In industrial motor control, efficiency is paramount. The low total losses of this IGBT module enable designers to meet stringent efficiency standards like IE3 and IE4. Its robust thermal performance and high short-circuit capability ensure reliability in demanding factory environments, powering everything from conveyor belts to large pump systems.
- Uninterruptible Power Supplies (UPS): For data centers and critical infrastructure, UPS systems must offer uncompromising reliability. The high power cycling capability and proven SEMiX package of the SEMIX151GD12E4 contribute to a longer operational lifetime. The module's efficiency also reduces cooling costs and the overall total cost of ownership (TCO) for the UPS.
- Solar Inverters: Maximizing energy harvest is the primary goal in solar applications. The module's excellent switching and conduction performance reduces the energy lost during the DC-to-AC conversion process. This allows for higher power output from the photovoltaic array and improves the levelized cost of energy (LCOE) for the solar installation. More details on high-efficiency power systems can be found in our resource center.
For further design-in support or to discuss the specific requirements of your application, please contact our technical team. Our experts can provide guidance on everything from thermal design to gate drive optimization.
