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Semikron SEMIX303GB12E4 IGBT Module

Semikron SEMIX303GB12E4: 1200V/300A six-pack IGBT for high-reliability inverters. Features press-fit pins & AlN substrate for superior thermal performance and streamlined assembly.

· Categories: IGBT Module
· Manufacturer: Semikron
· Price: US$ 120
· Date Code: 2019+
. Available Qty: 174
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SEMIX303GB12E4 Specification

 

Semikron SEMIX303GB12E4 | Robust 1200V Six-Pack IGBT for High-Reliability Power Conversion

The Semikron SEMIX303GB12E4 is an expertly engineered 1200V, 300A six-pack IGBT module designed for the rigorous demands of modern, high-power three-phase inverter systems. As a cornerstone of the proven SEMiX 3 family, this module integrates Semikron-Danfoss's advanced silicon technology with a robust, press-fit package, delivering a solution optimized for efficiency, reliability, and manufacturing excellence. It is purpose-built for engineers developing next-generation systems where performance cannot be compromised.

Key Engineering Advantages

  • Optimized for 3-Phase Inverters: The integrated six-pack (GB) configuration drastically simplifies busbar design and system assembly for applications like motor drives, solar inverters, and commercial UPS systems.
  • Superior Thermal Performance: Built on an Aluminium Nitride (AlN) substrate, the module exhibits very low thermal resistance, ensuring efficient heat extraction and enabling higher power density.
  • Solder-Free Assembly: Featuring reliable spring contacts for the auxiliary connections and press-fit pins for the main terminals, the SEMIX303GB12E4 eliminates the need for soldering, streamlining production and enhancing long-term mechanical reliability.
  • High-Efficiency Operation: Leverages Semikron's 4th generation Trench Field-Stop (T4) IGBT technology to achieve a competitive balance between low conduction losses (VCE(sat)) and switching losses.

Technical Deep Dive: The Core of Performance

The standout performance of the SEMIX303GB12E4 stems from two core technological pillars. First, the 4th generation Trench Field-Stop IGBT (IGBT4) provides a significant reduction in collector-emitter saturation voltage (VCE(sat)). For a power electronics designer, this directly translates to lower conduction losses, especially in high-current applications. The result is less waste heat, smaller required heatsinks, and a higher overall system efficiency—a critical factor in applications like solar inverters where every percentage point of efficiency matters.

Second, this module is co-packed with the sophisticated CAL 4 (Controlled Axial Lifetime) freewheeling diode. This is not a standard diode; it is engineered for soft-switching behavior. This "softness" mitigates voltage overshoots during turn-off, reducing electromagnetic interference (EMI) and lessening the stress on the IGBT itself. By integrating a Semikron CAL Diode, the module simplifies snubber circuit design and improves the system's overall robustness and reliability under harsh switching conditions.

Application Scenarios & Value Proposition

The SEMIX303GB12E4 is not a generic component; it is a strategic solution for specific, high-stakes applications:

  • Industrial Motor Drives: In variable frequency drives (VFDs), this module's robust thermal cycle capability and low conduction losses ensure reliable control of high-torque AC motors, from factory automation to pumps and fans.
  • Renewable Energy Inverters: For solar and wind power conversion, the module's high efficiency is paramount. Its reliable design and proven platform ensure long operational life, maximizing the return on investment for large-scale energy projects.
  • Uninterruptible Power Supplies (UPS): In critical data centers and industrial backup systems, the module's high current handling and short-circuit ruggedness provide the dependable power switching necessary to guarantee seamless operation during grid failures.

Key Parameter Overview

The following table highlights the critical electrical and thermal specifications that define the operational envelope of the SEMIX303GB12E4. For a complete dataset, including characteristic curves and package dimensions, please refer to the official documentation.

Parameter Value
Collector-Emitter Voltage (V_CES) 1200 V
Nominal Collector Current (I_Cnom) 300 A
Collector-Emitter Saturation Voltage (V_CE(sat), typ. @ I_Cnom, 25°C) 1.70 V
Total Power Dissipation (P_tot @ T_s=25°C) 1500 W
Thermal Resistance, Junction to Heatsink (R_th(j-s)) per IGBT 0.083 K/W
Short Circuit Withstand Time (t_psc) 10 µs

For detailed engineering data, download the official SEMIX303GB12E4 datasheet.

Engineer's FAQ

What are the main considerations for paralleling SEMiX 3 modules?
While the SEMIX303GB12E4 is a high-current module, some applications may require paralleling. Success hinges on ensuring symmetrical busbar layout to balance stray inductances and guaranteeing uniform heat dissipation across all modules. The positive temperature coefficient of VCE(sat) in IGBT4 technology provides good thermal stability for current sharing, but careful layout is paramount.

How does the press-fit technology improve system reliability?
Press-fit pins create a high-pressure, gas-tight connection between the module and the PCB. This cold-welded joint is immune to the thermal cycling fatigue that can cause solder joints to crack over time. This makes the assembly process faster, cleaner, and ultimately creates a more robust and durable final product, a key factor in improving the long-term thermal performance and reliability of the entire power stage.

If you are designing a high-power inverter and require a balance of proven reliability, thermal efficiency, and manufacturing ease, the Semikron SEMIX303GB12E4 is an exceptional choice. For pricing, availability, or to discuss your specific application needs, please contact our technical team.

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