Content last revised on April 25, 2024
Features
●3.3 kV F-IGBT
●450A half bridge
●Low Vce, Eoff and Rth
●High power density
●Low inductance module design
●T-sensor
●Easy paralleling and easy power scaling
●For flexible and compact medium voltage inverters
Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:3300V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :450A
Collector current Icp 1ms Tc=25°C :900A
Collector power dissipation Pc:55W
Isolation Voltage VIsol (AC 1 minute) :6000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +175°C
Mounting screw torque 5.5~6 N·m
