Semikron SKM450GB33F IGBT Module

Features

●3.3 kV F-IGBT

●450A half bridge

●Low Vce, Eoff and Rth

●High power density

●Low inductance module design

●T-sensor

●Easy paralleling and easy power scaling

●For flexible and compact medium voltage inverters

Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:3300V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :450A

Collector current Icp 1ms Tc=25°C :900A

Collector power dissipation Pc:55W

Isolation Voltage VIsol (AC 1 minute) :6000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +175°C

Mounting screw torque 5.5~6 N·m