MITSUBISHI CM200DU-24H-203 IGBT Module

Description:

Mitsubishi IGBT Modules are de-signed for use in switching applica-tions. Each module consists of two IGBTs in a half-bridge configurationwith each transistor having a re-verse-connected super-fast recov-ery free-wheel diode. All compo-nents and interconnects are iso-lated from the heat sinking base-plate, offering simplified systemassembly and thermal manage-ment.

Features:

Low Drive Power

Low VCE(sat)

Discrete Super-Fast RecoveryFree-Wheel Diode

High Frequency Operation

Isolated Baseplate for Easy Heat Sinking

Applications:

AC Motor Control

Motion/Servo Control

UPS

Welding Power Supplies

Absolute Maximum Ratings, Tj= 25°C unless otherwise specified

• Junction Temperature (Tj): -40 to 150°C
• Storage Temperature (Tstg): -40 to 125°C
• Collector-Emitter Voltage (G-E SHORT) (VCES): 1200 Volts
• Gate-Emitter Voltage (C-E SHORT) (VGES): ±20 Volts
• Collector Current (Tc = 25°C) (IC): 200 Amperes
• Peak Collector Current (Tj ≤ 150°C) (ICM): 400* Amperes
• Emitter Current (Tc = 25°C) (IE): 200 Amperes
• Peak Emitter Current (IEM): 400* Amperes
• Maximum Collector Dissipation (Tc = 25°C) (Pc): 1130 Watts
• Mounting Torque, M6 Main Terminal: 3.5~4.5 N · m
• Mounting Torque, M6 Mounting: 3.5~4.5 N · m
• Weight: 400 Grams
• Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) (Viso): 2500Vrms