Mitsubishi CM300HA-12H | High-Speed 600V Dual IGBT for Demanding Power Conversion
The Mitsubishi CM300HA-12H is an industry-proven dual IGBT module engineered for high-frequency, high-reliability power conversion systems. This device isn't just a collection of specifications; it's a foundational component for designers seeking a balance of speed, efficiency, and robustness in a thermally optimized package. It represents a workhorse solution for applications where performance cannot be compromised.
- High-Speed Switching: Optimized for applications operating above the typical line frequency, minimizing switching losses and enabling more compact magnetic components.
- Low Conduction Loss: Features a low collector-emitter saturation voltage (VCE(sat)), which directly translates to reduced power dissipation and improved overall system efficiency.
- Isolated Package: The module includes an electrically isolated baseplate, simplifying heatsink mounting and improving thermal management design by reducing parasitic capacitance and layout complexity.
- Proven Reliability: Built upon Mitsubishi's established H-Series IGBT technology, offering a long track record of field performance in demanding industrial environments.
Key Parameter Overview
For engineers, the data speaks for itself. The following table highlights the critical performance characteristics of the CM300HA-12H. These parameters are central to effective power stage design, simulation, and thermal analysis.
Parameter | Value |
---|---|
Collector-Emitter Voltage (VCES) | 600V |
Continuous Collector Current (IC) at TC=80°C | 300A |
Collector-Emitter Saturation Voltage (VCE(sat)) typ. at IC=300A | 2.2V |
Total Power Dissipation (PC) | 1130W |
Thermal Resistance (Rth(j-c)) per IGBT | 0.11 °C/W |
Short-Circuit Withstand Time (tsc) | 10µs (VCC=400V, VGE=15V) |
For a comprehensive list of all electrical and thermal characteristics, you can download the official CM300HA-12H datasheet here.
Application Scenarios & Engineering Value
The specific characteristics of the Mitsubishi CM300HA-12H make it an exceptional choice for several key applications:
- High-Frequency Welding Power Supplies: In arc or resistance welding, the module's fast turn-on/turn-off times enable precise energy delivery and superior weld quality. Its robustness is critical for withstanding the harsh electrical environment typical of these systems.
- Industrial Motor Drives: For AC induction or servo motors, the low VCE(sat) minimizes heat generation in the inverter, improving reliability and potentially reducing the size of the required heatsink. This makes it ideal for compact and powerful robotic servo drives.
- Uninterruptible Power Supplies (UPS): The module's efficiency and proven reliability are paramount in UPS systems, where uptime is non-negotiable. Its ability to handle high pulse currents ensures stable power delivery during grid-to-battery transitions.
Technical Deep Dive: What Drives Performance?
The performance of the CM300HA-12H is not accidental; it is the result of deliberate silicon and package design. The module utilizes Mitsubishi's advanced trench-gate field-stop IGBT structure. This design achieves a superior trade-off between conduction losses (VCE(sat)) and switching losses (Eon/Eoff). The "trench gate" architecture increases channel density for lower on-state resistance, while the "field stop" layer allows for a thinner n-drift region, which significantly reduces turn-off time and energy loss.
From a packaging perspective, the module's low thermal impedance is a critical, often-overlooked feature. The efficient heat transfer path from the silicon die to the case (Rth(j-c)) is fundamental to its power handling capability. This superior thermal performance allows the device to operate at higher currents and power levels while maintaining a safe junction temperature, directly contributing to the system's long-term reliability.
Frequently Asked Questions (FAQ)
1. What are the key gate drive considerations for the CM300HA-12H?
To achieve the specified fast switching performance and prevent spurious turn-on, a robust gate driver is essential. We recommend a gate voltage of +15V for turn-on and a negative voltage of -5V to -10V for secure turn-off, especially in noisy environments. The gate driver should have low output impedance and be placed as close as possible to the module's gate-emitter terminals to minimize loop inductance.
2. Can this module be paralleled for higher current applications?
Yes, the CM300HA-12H can be paralleled, but careful design is required. Its positive temperature coefficient of VCE(sat) helps with thermal balancing, but layout symmetry is crucial. Ensure identical trace lengths for gate drive signals and power connections (emitter and collector) to each module to promote equal current sharing during both static and dynamic conditions.
For more detailed requirements on IGBT modules or specific application support, please contact our technical team for an in-depth consultation.