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Mitsubishi QM75DY-2H

  • QM75DY-2H
  • QM75DY-2H Mitsubishi HIGH POWER SWITCHING USE INSULATED TYPE 75A 1000V

    · Categories: IGBT
    · Manufacturer: Mitsubishi
    · Price: US$ 25 In-Stock Offer
    · Date Code: Please Verify on Quote
    . Available Qty: 395
    MOQ: 1 PC
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    Content last revised on September 10, 2026

    QM75DY-2H Product details
    HIGH POWER SWITCHING USE INSULATED TYPE

    • IC Collector current .......................... 75A
    • VCEX Collector-emitter voltage ......... 1000V
    • hFE DC current gain............................... 75
    • Insulated Type

    • VCBO: Collector-base voltage with the emitter open. Rated at 1000V.
    • IC: Collector current (DC) rated at 75A.
    • PC: Collector dissipation at 25°C, rated at 500W.
    • IB: Base current (DC) rated at 4A.
    • ICSM: Surge collector reverse current value for one cycle of 60Hz (half-wave), rated at 750A.
    • Tj: Junction temperature range from -40°C to +150°C.
    • Tstg: Storage temperature range from -40°C to +125°C.
    • Viso: Isolation voltage, charged part to case, AC for 1 minute, rated at 2500V.
    • Mounting: Specifications for terminal screws M5 and M6, including torque values.
    • Weight: Typical weight rated at 250 grams.

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