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Mitsubishi QM75DY-2H IGBT Module

QM75DY-2H

QM75DY-2H Mitsubishi HIGH POWER SWITCHING USE INSULATED TYPE 75A 1000V

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$ 25
· Date Code: 2024+
. Available Qty: 400
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QM75DY-2H Specification

QM75DY-2H Product details
HIGH POWER SWITCHING USE INSULATED TYPE

• IC Collector current .......................... 75A
• VCEX Collector-emitter voltage ......... 1000V
• hFE DC current gain............................... 75
• Insulated Type

  • VCBO: Collector-base voltage with the emitter open. Rated at 1000V.
  • IC: Collector current (DC) rated at 75A.
  • PC: Collector dissipation at 25°C, rated at 500W.
  • IB: Base current (DC) rated at 4A.
  • ICSM: Surge collector reverse current value for one cycle of 60Hz (half-wave), rated at 750A.
  • Tj: Junction temperature range from -40°C to +150°C.
  • Tstg: Storage temperature range from -40°C to +125°C.
  • Viso: Isolation voltage, charged part to case, AC for 1 minute, rated at 2500V.
  • Mounting: Specifications for terminal screws M5 and M6, including torque values.
  • Weight: Typical weight rated at 250 grams.
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