Mitsubishi QM150DX-H IGBT Module

QM150DX-H Collector-emitter voltage VCEX 600V Collector-base voltage Emitter open VCBO 600V Emitter-base voltage Collector open VEBO 7V Collector current DC IC 150A Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Tj  –40~+150°C Storage temperature Tstg –40~+125°C Isolation voltage Viso 2500V Collector cutoff current VCE=600V, VEB=2V Emitter cutoff current VEB=7V Transistor Module 150-Amp 600-Volt 690-Watt.