SKM200GAL173D Semikron 1700V 200A Boost Chopper IGBT Module

Content last revised on May 4, 2026

SKM200GAL173D: 1700V 200A Boost Chopper IGBT Module by Semikron

Pioneering High-Efficiency Power Conversion

The SKM200GAL173D is a specialized high-performance IGBT Module engineered for demanding power electronics. Manufactured by Semikron, this device integrates a robust 1700V insulated-gate bipolar transistor and a CAL (Controlled Axial Lifetime) freewheeling diode in a boost chopper configuration. Capable of handling 200A of continuous current, it excels in switching efficiency and loss reduction. Why is the GAL topology significant? It directly streamlines boost converter layouts for renewable energy systems. Are parallel configurations supported? Yes, balanced current sharing enables seamless scaling for high-power applications. For 1700V boost circuits requiring minimal switching losses, this 200A module is the optimal choice.

Application Scenarios & Value

Achieving System-Level Benefits in High-Voltage Boost Topologies

Engineers often face significant layout and parasitic inductance challenges when designing step-up converters for renewable energy or industrial DC links. The SKM200GAL173D solves this by internally wiring the IGBT and freewheeling diode as a low-side switch with a top-side diode. This provides the exact configuration needed for a boost chopper. This pre-packaged topology minimizes external busbar connections. As a result, it drastically reduces stray inductance and mitigates voltage spikes during high-speed switching events.

In real-world applications, such as wind turbine inverters and heavy-duty industrial UPS systems, its voltage rating is vital. The module's 1700V blocking capability provides an ample safety margin for 690VAC or 1000VDC buses. The robust CAL diode recovers softly, preventing harmful oscillations that could damage sensitive control circuitry. If your architecture requires a standard half-bridge configuration, the SKM200GB176D provides comparable 200A, 1700V performance. Conversely, for systems demanding substantially higher current capacity, the FZ400R17KE3 offers a 400A rating at the same voltage level.

Technical Deep Dive

Decoding the Switching Efficiency of the CAL Diode and Trench Structure

To understand the module's superior performance, we must look at its core silicon. The SKM200GAL173D utilizes an advanced Trench/Field Stop IGBT architecture. Think of the Trench gate as a deep, vertical channel. This allows electrons to flow more freely than traditional planar designs, significantly lowering the on-state voltage drop. This translates to less heat generated during continuous conduction. This is a critical factor for maintaining thermal stability and a broad Safe Operating Area in the SEMITRANS 3 package.

Equally important is the integrated CAL freewheeling diode. In a boost converter, the diode must handle massive current commutation when the IGBT turns off. The CAL diode acts like a sophisticated shock absorber. Instead of snapping shut and causing violent voltage transients, it features a controlled, soft reverse recovery. This drastically reduces Electro-Magnetic Interference and lowers the turn-on losses in the paired IGBT. The copper baseplate further ensures that residual heat is rapidly transferred to the heatsink.

Key Parameter Overview

Essential Specifications Grouped for Quick Evaluation

Download the SKM200GAL173D datasheet for detailed specifications and performance curves.

FAQ

Resolving Common Engineering Queries

• How does the GAL configuration differ from standard half-bridge modules?
  The GAL topology is specifically wired as a low-side IGBT with a top-side freewheeling diode, making it a drop-in solution for boost (step-up) converters. A standard half-bridge features two IGBTs in series, which is better suited for inverter output stages.
• Can the SKM200GAL173D be paralleled for higher output power?
  Yes, multiple modules can be connected in parallel. However, engineers must ensure precise gate drive synchronization and symmetrical busbar layouts to achieve balanced current sharing. For more layout strategies, explore our comprehensive guide on mastering IGBT paralleling.
• What is the primary advantage of the integrated CAL diode?
  The CAL diode offers soft reverse recovery characteristics. This prevents harsh voltage spikes during switching events, significantly lowering EMI and protecting the 1700V IGBT from destructive commutation stresses.

Ready to integrate the SKM200GAL173D into your next high-voltage boost converter design? Verify stock, review bulk pricing, and secure your components by reaching out to our dedicated procurement team today.