Semikron SKM200GB176D | Robust 1700V IGBT for High-Power Industrial Drives
The Semikron SKM200GB176D is a high-performance 1700V, 200A half-bridge IGBT module engineered for demanding power conversion applications. Housed in the industry-standard SEMITRANS® 2 package, this device offers a proven platform for designers seeking reliability, thermal efficiency, and superior electrical performance in systems operating with high DC-link voltages.
Product Highlights Overview
Engineered for longevity and efficiency, the SKM200GB176D integrates key technologies to solve common design challenges:
- High Voltage Blocking Capability: With a VCES of 1700V, it provides a significant safety margin for 800V-1100V DC-link systems, common in renewable energy and heavy industrial equipment.
- Optimized Switching Performance: Leverages Semikron's Trench IGBT 4 technology to achieve a competitive balance between low conduction losses (VCE(sat)) and reduced switching energy, directly lowering operational temperatures and heatsink requirements.
- Soft Switching Freewheeling Diode: Incorporates a CAL 4 (Controlled Axial Lifetime) diode, renowned for its soft recovery characteristics. This minimizes voltage overshoots and electromagnetic interference (EMI), simplifying filter design.
- Excellent Thermal Management: Built on an isolated copper baseplate, ensuring efficient heat transfer from the semiconductor die to the heatsink, a critical factor for system reliability under heavy loads. For more on this, see our guide on unlocking IGBT thermal performance.
Technical Deep-Dive: The Engineering Edge
The performance of the Semikron SKM200GB176D is rooted in its core semiconductor technology. Understanding these elements reveals its true value in a power system.
Trench Gate IGBT 4 Chip: Unlike older planar IGBT structures, the Trench Gate design creates a vertical current path that significantly increases the channel density. For the engineer, this translates directly into a lower on-state voltage drop (VCE(sat)). In a high-current application like a motor drive, this reduction in conduction loss means less power dissipated as heat. The result is higher system efficiency and improved reliability, as lower operating temperatures reduce thermal stress on the entire module.
CAL 4 Diode Technology: The freewheeling diode is as critical as the IGBT itself. The CAL Diode is engineered for a "soft" reverse recovery. During turn-off, a hard recovery diode can create abrupt current changes, leading to high voltage spikes and radiated EMI. The CAL 4's softer recovery profile mitigates these issues at the source, reducing the need for complex and costly snubber circuits and making EMI compliance easier to achieve.
Application Suitability and Value
The robust characteristics of the SKM200GB176D make it an ideal choice for several high-power applications:
- Industrial Motor Drives: In variable frequency drives (VFDs) for motors above 75 kW, the 1700V rating provides resilience against voltage transients from long motor cables, while its thermal efficiency ensures stable operation during high-torque, low-speed conditions.
- Wind Turbine Converters: This module is perfectly suited for the grid-side inverter in wind power systems. Its high voltage rating can handle the wide-ranging DC bus voltages produced by the generator, ensuring reliable power injection into the grid. Learn more about IGBTs in wind-to-grid conversion.
- Uninterruptible Power Supplies (UPS): For large commercial and industrial UPS systems, reliability is paramount. The SKM200GB176D's proven SEMITRANS package and robust die technology provide the dependability required to protect critical loads.
Key Technical Parameters
The following table outlines the critical electrical and thermal specifications for design engineers. For a complete list of parameters, download the official Semikron SKM200GB176D datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 1700 V |
| Nominal Collector Current (IC nom) | 200 A |
| Collector-Emitter Saturation Voltage (VCE(sat), Typ. @ IC nom, Tj=25°C) | 1.75 V |
| Thermal Resistance, Junction to Case (Rth(j-c) per IGBT) | 0.08 K/W |
| Short Circuit Withstand Time (tsc) | 10 µs |
| Maximum Junction Temperature (Tj max) | 150 °C |
Frequently Asked Questions (FAQ)
Q1: What are the primary considerations for heatsink design with the SKM200GB176D?
A: The key is the low thermal resistance (Rth(j-c)) of 0.08 K/W per IGBT. Your primary goal is to minimize the thermal resistance of the thermal interface material (TIM) and the heatsink itself. For a 200A module, proper mounting pressure (as specified in the datasheet) is crucial to ensure a thin, void-free TIM layer. Use the power loss figures from the datasheet curves (or simulation tools) for your specific switching frequency and load to calculate the required heatsink performance to keep the junction temperature well below the 150°C maximum for long-term reliability.
Q2: Can the SKM200GB176D modules be paralleled for higher current output?
A: Yes, these modules are suitable for paralleling. However, successful implementation requires careful design. Key factors include ensuring symmetrical layout of the busbars to equalize stray inductances and using gate driver circuits with individual gate resistors for each module to prevent oscillations. The positive temperature coefficient of VCE(sat) in Trench IGBT 4 technology provides a degree of self-balancing for thermal runaway, but a well-engineered layout is still the most critical factor for reliable current sharing.
For further inquiries about our extensive portfolio of IGBT modules or for specific application support for the SKM200GB176D, please contact our technical team.
