CM400E2U-12F Mitsubishi 600V 400A Dual IGBT Module

Content last revised on November 21, 2025

CM400E2U-12F Mitsubishi IGBT Module: Engineering Deep Dive

Optimizing Power Conversion with 6th Generation CSTBT™ Technology

The Mitsubishi CM400E2U-12F is a high-power dual IGBT module engineered to deliver superior efficiency and reliability in demanding power conversion systems. This module provides a robust solution for managing high-current switching operations by integrating advanced chip technology within a standardized, insulated package. Its core value lies in the significant reduction of both conduction and switching losses, a critical factor for designers of next-generation inverters and motor drives. For industrial VFDs up to 150kW targeting maximum efficiency, the CM400E2U-12F's low VCE(sat) makes it a definitive choice.

• Core Specifications: 600V | 400A | VCE(sat) 1.7V (typ)
• Key Benefit 1: Minimizes system power loss for greater efficiency.
• Key Benefit 2: Enhances thermal stability and performance.

Application Scenarios & Value

System-Level Benefits in High-Frequency Industrial Drives

The CM400E2U-12F is purpose-built for high-performance applications where energy efficiency and thermal management are paramount. Its primary domain is in industrial Variable Frequency Drive (VFD) systems, which are essential for controlling the speed of AC motors in machinery like conveyors, pumps, and HVAC systems. In these applications, the module's low collector-emitter saturation voltage (VCE(sat)) of 1.7V at a 400A current directly translates to lower conduction losses. This reduction is not just a marginal gain; it means less heat is generated within the module during operation. The engineering consequence is significant: designers can potentially specify smaller, more cost-effective heatsinks, leading to a more compact and economically efficient overall system design. This focus on loss reduction is a key enabler for systems that must comply with increasingly stringent energy efficiency standards.

The module's dual configuration simplifies the design of a three-phase inverter's half-bridge leg, reducing component count and simplifying PCB layout. While the CM400E2U-12F is optimized for 400A applications, systems requiring higher current handling for larger motor loads may benefit from exploring related components. For instance, the CM600DX-24T provides a path for scaling power output while maintaining a similar design philosophy.

Key Parameter Overview

Decoding the Specs for Enhanced Thermal Reliability

The technical specifications of the CM400E2U-12F are foundational to its performance. The parameters below have been selected to provide engineers with the critical data needed for system modeling, thermal analysis, and gate drive design.

This table presents a subset of the device's parameters. For comprehensive electrical characteristics, thermal performance curves, and safe operating area (SOA) charts, please refer to the official documentation.

Download the CM400E2U-12F datasheet for detailed specifications and performance curves.

Technical Deep Dive

A Closer Look at CSTBT™ and its Impact on Loss Reduction

The performance of the CM400E2U-12F is largely defined by its use of Mitsubishi's 6th generation Carrier Stored Trench-Gate Bipolar Transistor (CSTBT™) technology. This advanced chip structure is engineered to optimize the trade-off between conduction loss (VCE(sat)) and switching loss (Eon/Eoff). The low VCE(sat) is achieved by enhancing carrier injection and storage on the collector side, which effectively reduces the on-state resistance of the device.

Think of VCE(sat) as the friction inside a water pipe. A standard pipe (older IGBT) might have a rough interior, causing significant pressure drop and wasting energy as water flows. The CSTBT™ design is like a perfectly smooth, wider pipe; it allows the same amount of current (water) to flow through with substantially less pressure drop (voltage loss), ensuring more power is delivered to the load and less is wasted as heat.

Furthermore, the technology allows for faster turn-off characteristics, which reduces switching losses—a critical factor in modern IGBT Module applications that use high-frequency Pulse Width Modulation (PWM) to achieve finer motor control and reduce audible noise. This dual improvement in both conduction and switching efficiency makes the CM400E2U-12F a highly effective component for designers aiming to push the boundaries of system performance.

Frequently Asked Questions (FAQ)

How does the CM400E2U-12F help reduce power loss in a VFD?

Its low VCE(sat) of 1.7V (typ) minimizes conduction losses, and its advanced CSTBT™ chip design optimizes switching characteristics. This dual-front approach reduces the total energy dissipated as heat, directly improving the VFD's overall efficiency.

What is the primary benefit of its 6th generation CSTBT™ chip?

The primary benefit is achieving a superior balance between low on-state voltage (VCE(sat)) and fast switching speed, which reduces both major sources of power loss in an IGBT.

How does the module's thermal resistance impact system design?

A low thermal resistance from junction to case, as specified in the datasheet, allows heat generated within the IGBT and diode chips to be transferred more efficiently to the heatsink. This enables more effective cooling, supports higher power density, and enhances long-term operational reliability.

Engineering Support & Further Analysis

For detailed application notes on gate drive design, thermal management strategies, and system integration, please review the resources available on our website or contact our engineering support team to discuss the specific requirements of your power conversion project.