CM800HC-90R Mitsubishi 4500V 800A High Voltage IGBT Module

Content last revised on February 6, 2026

CM800HC-90R: Engineering High-Voltage Systems with Thermal Resilience

An In-Depth Analysis of a 4.5kV/800A IGBT for Demanding Power Conversion

The Mitsubishi CM800HC-90R is a high-power IGBT module engineered for the rigorous demands of high-voltage power electronics. With its core specifications of 4500V and 800A, this device provides a robust foundation for systems requiring exceptional durability and performance. Key benefits include superior thermal stability due to its AlSiC baseplate and reduced conduction losses achieved through advanced CSTBT™ technology. This module directly addresses the challenge of building reliable inverters for 3.3kV AC line applications by providing the necessary voltage headroom and thermal margin. For power systems demanding robust performance under severe thermal and electrical stress, the CM800HC-90R's combination of high voltage rating and optimized thermal design makes it a definitive choice.

Key Parameter Overview

Decoding the Specs for Enhanced Thermal Reliability

The technical specifications of the CM800HC-90R highlight its suitability for high-power, high-voltage applications where thermal management and electrical stability are paramount. The module's design focuses on delivering reliable power handling with minimized losses.

Download the CM800HC-90R datasheet for detailed specifications and performance curves.

Application Scenarios & Value

Achieving System-Level Benefits in High-Voltage Power Conversion

The CM800HC-90R is engineered for applications where voltage requirements exceed standard industrial levels, making it a critical component in next-generation power infrastructure. Its primary value is realized in systems that demand both high blocking voltage and sustained power throughput with high reliability.

A prime engineering scenario is the design of a Medium-Voltage Drive (MVD) for multi-megawatt industrial motors. In such an application, engineers face the dual challenge of managing extreme electrical stress and dissipating significant heat to ensure a 20+ year operational lifespan. The CM800HC-90R directly addresses this with its 4500V collector-emitter voltage, providing the necessary safety margin for systems connected to 3.3kV lines. Furthermore, its exceptionally low maximum thermal resistance (Rth(j-c)) of 0.015 K/W is a decisive factor. This superior thermal performance allows for more efficient heat transfer to the heatsink, which can lead to a smaller, more cost-effective thermal management solution and enhances the module's resilience to power cycling. You can find out more information about how module packaging impacts thermal performance by reading our guide on how IGBT packaging dictates thermal performance and reliability. Other key applications include:

• Power transmission and distribution systems, such as STATCOM and other FACTS devices.
• High-power converters and DC choppers.
• Auxiliary power supplies and main inverters in railway traction systems.

For systems requiring similar voltage ratings but higher current capabilities, the related CM900HC-90H offers a 900A capacity within the same family.

Technical Deep Dive

A Closer Look at CSTBT™ and AlSiC for Long-Term Reliability

Two core design elements distinguish the CM800HC-90R's performance: Mitsubishi's Carrier Stored Trench Bipolar Transistor (CSTBT™) technology and the Aluminum Silicon Carbide (AlSiC) baseplate. Together, they create a module optimized for both low losses and exceptional mechanical durability.

The Mitsubishi CSTBT™ is an advanced IGBT cell structure that introduces a carrier storage layer to dramatically reduce the collector-emitter saturation voltage (VCE(sat)) without significantly compromising switching speed. Think of this storage layer as a conductivity enhancement zone near the collector. When the IGBT is on, this zone is flooded with charge carriers, effectively lowering the device's internal resistance. This is akin to widening a highway's lanes during peak traffic; it allows more current to flow with less congestion (voltage drop), directly reducing conduction losses and heat generation.

This electrical efficiency is paired with a mechanically robust foundation. The AlSiC baseplate has a coefficient of thermal expansion (CTE) that closely matches the ceramic substrate it's bonded to. Why is this critical? In power electronics, every on/off cycle causes the module to heat and cool, leading to expansion and contraction. A CTE mismatch between layers is like trying to bond wood and steel together and then repeatedly heating them; the different expansion rates create immense stress at the bond line, eventually leading to solder fatigue and device failure. The AlSiC baseplate acts as a stable foundation, similar to how a specialized architectural base protects a skyscraper in an earthquake zone, by minimizing this stress and drastically improving the module's power cycling capability and overall operational life. For a comprehensive understanding of these parameters, you can review our guide on decoding IGBT datasheets.

Frequently Asked Questions (FAQ)

What makes the CM800HC-90R suitable for grid-tied applications operating on 3.3kV AC lines?
The module's VCES of 4500V provides a critical safety margin over the peak line-to-line voltages and transient overvoltages common in 3.3kV systems. This headroom is essential for ensuring long-term reliability and preventing catastrophic failure due to voltage spikes.

How does the low thermal impedance of the CM800HC-90R benefit the overall system design and cost?
A low Rth(j-c) of just 0.015 K/W (max) signifies highly efficient heat transfer from the silicon die to the module case. This allows engineers to either reduce the size and cost of the required heatsink for a given power level or to push more power through the device while maintaining a safe junction temperature, thereby improving power density.

What is the practical advantage of the CSTBT™ technology used in this module?
The primary advantage is a lower VCE(sat) compared to conventional IGBTs of the same voltage class. This directly translates to lower conduction losses, meaning less energy is wasted as heat. For the system designer, this results in higher overall inverter efficiency and reduced thermal management requirements.

To evaluate the CM800HC-90R for your high-voltage design, contact our technical specialists for further information and sourcing options. Our team is equipped to provide the data and support you need to make informed engineering decisions for your most demanding power projects.