CM150RL-12NF Mitsubishi 600V 150A Chopper IGBT Module

CM150RL-12NF IGBT Module In-stock / Mitsubishi: 600V 150A for high power switching. 90-day warranty, used in industrial drives. Global fast shipping. Get quote.

· Categories: IGBT
· Manufacturer: Mitsubishi
· Price: US$ 30
· Date Code: 2022+
. Available Qty: 358
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Content last revised on November 22, 2025

CM150RL-12NF | 1200V 150A Single IGBT Module for High-Efficiency Power Conversion

Product Overview: Core Specifications and Engineering Advantages

Engineered for high-efficiency chopper circuits, the Mitsubishi CM150RL-12NF is a single IGBT module that leverages a low VCE(sat) design to minimize conduction losses in demanding industrial applications. This module integrates a 1200V, 150A IGBT with a free-wheeling diode in a compact, isolated package, offering a robust building block for power control systems. Key specifications include: 1200V Collector-Emitter Voltage | 150A Collector Current | 1.9V (typ) VCE(sat). The primary benefits are significantly reduced thermal load and enhanced overall system efficiency. This single-element configuration provides designers with maximum flexibility for topologies like boost converters, buck converters, or high-power DC switching. For power systems requiring precise DC control and high operational efficiency, this 1200V single IGBT module is a strategically sound choice.

Key Parameter Overview

Decoding the Specs for Efficient Power Switching

The technical specifications of the CM150RL-12NF are optimized for performance and reliability in high-power chopper and inverter applications. The parameters below detail the module's electrical and thermal capabilities, providing the essential data for system design and simulation.

Functional Group: Absolute Maximum Ratings (Tc=25°C)
Collector-Emitter Voltage (Vces) 1200V
Gate-Emitter Voltage (Vges) ±20V
Collector Current (Ic) 150A
Collector Power Dissipation (Pc) 890W
Junction Temperature (Tj) -40 to +150°C
Functional Group: Electrical Characteristics (Tj=25°C)
Collector-Emitter Saturation Voltage (VCE(sat)) @ Ic=150A 1.9V (typ), 2.4V (max)
Gate-Emitter Threshold Voltage (VGE(th)) 5.0V (typ), 4.0-7.0V
Collector Cut-off Current (Ices) @ Vce=1200V 1mA
Diode Forward Voltage (Vf) @ Ie=150A 1.9V (typ), 2.4V (max)
Functional Group: Thermal & Isolation Characteristics
Thermal Resistance (Rth(j-c)) IGBT 0.14 °C/W (max)
Thermal Resistance (Rth(j-c)) Diode 0.25 °C/W (max)
Isolation Voltage (Viso) 2500V (AC, 1 minute)

Download the CM150RL-12NF datasheet for detailed specifications and performance curves.

Application Scenarios & Value

System-Level Benefits in Industrial DC Power Control

The CM150RL-12NF is optimally suited for high-frequency power conversion applications where efficiency and thermal stability are critical design drivers. Its single-switch (chopper) topology makes it a versatile component for a range of power systems.

A primary application is in the design of high-power DC-DC converters, such as those used in renewable energy systems to step up voltage from solar panels or batteries. In this scenario, engineers face the challenge of maximizing energy transfer while minimizing heat dissipation in compact, often environmentally sealed enclosures. The CM150RL-12NF's low collector-emitter saturation voltage (VCE(sat)) of 1.9V (typical) directly addresses this. A lower VCE(sat) is analogous to lower friction; it reduces the energy lost as heat during the on-state, directly improving the converter's efficiency and reducing the burden on the cooling system. This enables designers to specify smaller, more cost-effective heatsinks, contributing to a higher overall power density and lower system cost. The robust 1200V rating provides substantial design margin for systems operating from high-voltage DC buses, ensuring reliability against transient voltage spikes.

This module also finds extensive use in industrial motor controls, uninterruptible power supplies (UPS), and Welding Power Supply systems. For applications requiring lower current handling, the related CM100RL-24NF offers a similar feature set in a 100A rating.

Frequently Asked Questions (FAQ)

What are the primary applications for a single IGBT module like the CM150RL-12NF?
The single or "chopper" configuration is ideal for power topologies that require one primary switching element. This includes DC-DC boost converters, buck converters, high-power DC choppers for motor control, and single-phase PFC (Power Factor Correction) circuits. Its flexibility allows engineers to implement custom power stages without the constraints of a pre-configured half-bridge or six-pack module.

How does the typical VCE(sat) of 1.9V impact the thermal design of a power converter?
The VCE(sat) value is a direct measure of on-state voltage drop and is critical for calculating conduction losses (Power Loss ≈ VCE(sat) x Collector Current). A lower VCE(sat), like the 1.9V offered by the CM150RL-12NF, results in less power dissipated as heat. This directly reduces the required capacity of the cooling system, allowing for smaller heatsinks, lower fan speeds, or even passive cooling in some duty cycles, which improves system reliability and reduces both size and cost.

What is the significance of the 2500V isolation voltage for system safety?
The 2500V isolation voltage (Viso) specifies the dielectric strength between the module's live terminals and its metal baseplate. This is a critical safety feature, ensuring that high voltages are safely contained within the power circuit and cannot reach the chassis or heatsink, which are often accessible. This level of isolation is essential for meeting international safety standards, such as IEC 61800-5-1, in industrial equipment, protecting both operators and downstream control electronics.

Technical Deep Dive

Analyzing Thermal Performance and Conduction Efficiency

A component's long-term reliability is fundamentally linked to its thermal management. For the CM150RL-12NF, two key parameters—VCE(sat) and thermal resistance (Rth(j-c))—define its efficiency and thermal behavior. The low VCE(sat) ensures minimal heat generation during conduction phases. Subsequently, the module's ability to efficiently transfer this heat away from the silicon chip is determined by its Rth(j-c) of 0.14 °C/W. This value acts as a measure of thermal impedance. Thinking of Rth(j-c) as the wall thickness of a thermos provides a useful analogy; a lower value signifies a more conductive path, allowing heat to escape from the junction to the case quickly. This prevents the junction temperature from reaching critical limits, thereby enhancing the module's lifespan and its Safe Operating Area (SOA).

System Design and Integration Support

To further evaluate the CM150RL-12NF for your specific application, please refer to the comprehensive datasheet for detailed characteristic curves, including SOA graphs and switching energy data. For inquiries regarding implementation, thermal modeling, or gate drive compatibility, our team can provide technical support to facilitate a smooth design-in process.

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