Mitsubishi CM450DX-24T IGBT Module

• Manufacturer: Mitsubishi Electric
• Product Category: IGBT Modules
• RoHS: RoHS compliant
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector-Emitter Voltage (VCEO Max): 1.2 kV (1200V)
• Collector-Emitter Saturation Voltage: 1.65V
• Continuous Collector Current at 25°C: 450A
• Gate-Emitter Leakage Current: 500 nA (nanoamperes)
• Power Dissipation (Pd): 2.5 kW (kilowatts)
• Minimum Operating Temperature: -40°C
• Maximum Operating Temperature: +150°C
• Maximum Gate Emitter Voltage: 20V
• Mounting Style: Screw
• Brand: Mitsubishi Electric
• Technology: Silicon (Si)

IGBT modules are widely used in power electronics applications for switching high-power loads. These modules combine the advantages of both MOSFETs and bipolar transistors, making them suitable for high-voltage, high-current applications.