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Mitsubishi CM600HG-130H IGBT Module

#Mitsubishi, #CM600HG_130H, #IGBT_Module, #IGBT, CM600HG-130H Insulated Gate Bipolar Transistor, 600A I(C), 6500V V(BR)CES, N-Channel, MODULE-6

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$ 78
· Date Code: 2024+
. Available Qty: 154
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CM600HG-130H Specification

Sell CM600HG-130H, #Mitsubishi #CM600HG-130H Stock, CM600HG-130H Insulated Gate Bipolar Transistor, 600A I(C), 6500V V(BR)CES, N-Channel, MODULE-6, #IGBT_Module, #IGBT, #CM600HG_130H
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URL: https://www.slw-ele.com/cm600hg-130h.html

Manufacturer Part Number: CM600HG-130H

Part Life Cycle Code: Active

Manufacturer: Mitsubishi ELECTRIC CORP

Part Package Code: MODULE

Package Description: FLANGE MOUNT, R-XUFM-X6

Pin Count: 6

Collector Current-Max (IC): 600 A

Collector-Emitter Voltage-Max: 6500 V

Configuration: COMPLEX

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X6

Number of Elements: 3

Number of Terminals: 6

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 8900 W

Qualification Status: Not Qualified

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Transistor Application: POWER CONTROL

Transistor Element Material: SILICON

Turn-off Time-Nom (toff): 8700 ns

Turn-on Time-Nom (ton): 1550 ns

Insulated Gate Bipolar Transistor, 600A I(C), 6500V V(BR)CES, N-Channel, MODULE-6

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