Content last revised on January 13, 2026
Mitsubishi CM900HC-90H | Ultra-High Voltage IGBT for Grid-Scale Power Conversion
The Mitsubishi CM900HC-90H is an engineering powerhouse, a high-voltage IGBT module designed not for everyday applications, but for the demanding frontiers of energy and heavy industry. This component represents the pinnacle of power semiconductor design, providing the foundational switching capability for systems operating at medium-voltage levels. For engineers designing the next generation of grid infrastructure, traction systems, or industrial mega-drives, the CM900HC-90H offers a combination of extreme voltage tolerance, high current capacity, and field-proven reliability.
- Unmatched Voltage Class: With a 4500V collector-emitter voltage (VCES), it is engineered for direct integration into medium-voltage converter topologies.
- High Current Handling: A robust 900A continuous collector current (IC) enables the design of multi-megawatt power conversion stages.
- Proven H-Series Reliability: Built on Mitsubishi Electric's legacy of high-reliability power modules, ensuring long service life in critical applications.
- Optimized for High Power: Utilizes advanced silicon technology to balance conduction losses and switching performance at extreme power levels.
Key Parameter Overview
Engineers require precise data for system modeling and design. The table below summarizes the critical electrical and thermal characteristics of the Mitsubishi CM900HC-90H. For a comprehensive list of specifications, you can download the full datasheet here.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 4500 V |
| Collector Current (IC) @ TC=80°C | 900 A |
| Collector-Emitter Saturation Voltage (VCE(sat)) typ. @ IC=900A | 3.2 V |
| Isolation Voltage (Visol) AC, 1 minute | 10.2 kV |
| Maximum Junction Temperature (Tjmax) | 150 °C |
| Package Type | Standard High Voltage Module |
Engineering the Megawatt Scale: A Technical Breakdown
The performance of the Mitsubishi CM900HC-90H is rooted in specialized semiconductor technology tailored for high-voltage operation. Two aspects are particularly critical for design engineers.
The 4500V Advantage: This ultra-high voltage rating is a strategic enabler. In medium-voltage applications (e.g., 3.3kV or 6.6kV grids), using 4.5kV devices allows for simpler and more robust multi-level converter topologies like the Neutral Point Clamped (NPC) or Modular Multilevel Converter (MMC). By reducing the number of components required in series, designers can minimize gate drive complexity, improve system reliability, and achieve higher overall power density.
The Core of Performance: CSTBT™ Technology: At the heart of this module is Mitsubishi's proprietary Carrier Stored Trench-Gate Bipolar Transistor (CSTBT™) structure. This advanced silicon design represents a significant evolution in IGBT technology. It achieves an exceptionally low collector-emitter saturation voltage (VCE(sat)) for a given blocking voltage, which directly reduces conduction losses. For more insight into the underlying semiconductor design, explore our deep dive into the hybrid structure of IGBTs. This efficiency is paramount in multi-megawatt systems where even fractional improvements in loss reduction translate to substantial savings in cooling system costs and operational expenditure.
Where High Voltage Meets High Demand: Core Applications
The unique specifications of the CM900HC-90H make it the ideal choice for a specific class of high-power applications where failure is not an option.
- HVDC & Grid Stabilization: It serves as a cornerstone component for Voltage Source Converters (VSCs) in modern HVDC transmission lines and FACTS devices like STATCOMs. Its high voltage and current ratings enable the fine control and high power throughput necessary for stabilizing national power grids.
- Mainline Traction Inverters: In locomotives and high-speed trains, this module provides the raw power to drive massive traction motors. Its proven reliability and thermal stability are essential for enduring the harsh vibrations and demanding load cycles of railway environments.
- Industrial Mega-Drives: This module is critical for building multi-megawatt Variable Frequency Drives (VFDs) that power the largest industrial machinery, including mine winders, steel rolling mills, and marine propulsion systems.
Engineer to Engineer: Common Questions Answered
Designing with a 4.5kV module presents unique challenges. Here are answers to common questions our experts encounter.
What are the key considerations for the gate drive design?A 4.5kV IGBT requires a highly robust gate drive unit. Key considerations include providing sufficient creepage and clearance for high-voltage isolation, delivering high peak current to quickly charge the large input capacitance, and implementing a negative gate voltage during the off-state to ensure immunity against dv/dt-induced parasitic turn-on. An active Miller clamp is often a necessity for reliable switching.
How does thermal management differ for such a high-power module?Effective heat dissipation is non-negotiable. While a standard heatsink may suffice at lower power, optimizing the performance of the CM900HC-90H often requires advanced thermal solutions. This includes using high-performance thermal interface materials (TIMs) to minimize contact resistance and, in many cases, employing liquid cooling systems to maintain the junction temperature well below its 150°C limit during peak loads. Understanding and minimizing the total thermal resistance (Rth) is fundamental to design success, a topic we cover in our guide on unlocking IGBT thermal performance. For projects demanding this level of power conversion, contact our technical team for application support.
