Mitsubishi PM150CSD120 is a power module used in high-power electrical applications, It is a dual IGBT (Insulated Gate Bipolar Transistor) module that consists of two insulated gate bipolar transistor chips in a single package. The PM150CSD120 module has maximum collector current rating 150A & maximum collector-emitter voltage rating 1200V.
The module(PM150CSD120) is designed for use in including motor control, power supplies, and welding equipment, with built-in short-circuit protection to prevent damage to the module or the connected equipment in the event of a fault.
PM150CSD120 FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-formance is improved by 1μm fine rule process.
b) Using new Diode which is designed to get soft reverserecovery characteristics.
•3φ 150A, 1200V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication Circuits for over-current, short-Circuit, over-temperature & under-voltage(P-Fo available from upper leg devices)
• Acoustic noise-less 30kW class inverter application
• UL Recognized
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:150A
Collector current Icp:300A
Collector power dissipation Pc:781W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Weight 920g
