Mitsubishi PM75CS1D060 | 600V 75A DIPIPM™ for Compact, High-Reliability Motor Drives
The Mitsubishi PM75CS1D060 is not just an IGBT module; it is a highly integrated Intelligent Power Module (IPM) designed to streamline the development of compact and efficient three-phase inverter systems. By consolidating seven 5th generation CSTBT™ (Carrier Stored Trench-Gate Bipolar Transistor) IGBTs, free-wheeling diodes, and optimized gate drive and protection circuitry into a single Dual-In-line Package, this module offers a robust solution for engineers targeting applications up to 15kW.
Product Highlights at a Glance
- High Integration (7-in-1): Integrates a 3-phase converter inverter bridge with a brake chopper IGBT, drastically reducing PCB footprint and simplifying assembly.
- Advanced Chip Technology: Utilizes Mitsubishi’s 5th generation CSTBT™ technology to achieve an excellent balance between low saturation voltage (Vce(sat)) and reduced switching losses.
- Built-in Intelligence: Features integrated High-Voltage and Low-Voltage ICs (HVIC/LVIC) for direct logic-level control, eliminating the need for external gate drivers and opto-isolators.
- Comprehensive On-Chip Protection: Includes critical protection circuits for Short-Circuit (SC), control supply Under-Voltage (UV) lockout, and Over-Temperature (OT) via an analog temperature output (VOT), ensuring high system reliability.
Technical Deep Dive: Beyond the Silicon
The true engineering value of the PM75CS1D060 lies in its holistic system-in-a-package design. The integration of HVICs and LVICs is a game-changer for designers. It removes the complex and often troublesome task of designing isolated gate drive power supplies for the high-side IGBTs. This not only saves significant board space but also minimizes parasitic inductance in the gate loop, leading to cleaner switching waveforms and reduced electromagnetic interference (EMI), a critical consideration in modern power electronics.
Furthermore, the built-in protection mechanisms are not mere add-ons; they are precisely matched to the IGBTs' Safe Operating Area (SOA). The short-circuit protection, for example, offers a much faster response time than what is typically achievable with external sensing resistors and comparators. This rapid, on-chip intervention can be the difference between a recoverable fault and a catastrophic module failure, a crucial factor in building truly robust servo drives and industrial inverters.
Key Parameter Overview
The following table outlines the core electrical characteristics that define the performance of the Mitsubishi PM75CS1D060. These specifications are engineered for demanding power conversion tasks.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 600 V |
| Collector Current (IC) | 75 A |
| Collector-Emitter Saturation Voltage (VCE(sat)) (Typ. at IC=75A) | 1.6 V |
| Power Dissipation (PC) | 289 W |
| Control Supply Voltage (VD, VCC) | 15 V (13.5V to 16.5V) |
| Junction Temperature (Tj) | -20 to 150 °C |
For a complete engineering specification, you can Download the Datasheet.
Application Scenarios & Value Proposition
The PM75CS1D060 excels in applications where power density, reliability, and time-to-market are critical design drivers.
- Variable Frequency Drives (VFDs): Its compact DIPIPM™ package allows for significantly smaller VFD designs for motors in the 7.5kW to 15kW class. The integrated thermal feedback (VOT pin) enables sophisticated thermal management, improving the drive's lifespan and overload capability.
- Industrial Servo Drives: In precision motion control, the module's low conduction losses and clean switching characteristics translate directly to higher system efficiency and more accurate torque control. The integrated protection ensures the drive can withstand the harsh electrical environment of a factory floor.
- Commercial HVAC and Pumps: The all-in-one nature of the module simplifies manufacturing and enhances the reliability of commercial air conditioning compressors and pump systems, where downtime can be costly. The Mitsubishi CSTBT™ technology ensures high efficiency, meeting stringent energy consumption standards.
Engineer's FAQ
What is the primary advantage of the PM75CS1D060 DIPIPM™ over a discrete IGBT solution?
The main advantage is the drastic reduction in design complexity and risk. By integrating the gate drive and protection circuits, it eliminates months of engineering effort related to component selection, layout optimization for parasitics, and validation. This translates to a faster time-to-market, a smaller final product, and field-proven reliability from a single, tested component.
How is the high-side gate drive powered in this module?
The module is designed to be used with a bootstrap power supply circuit. The integrated HVIC includes a high-voltage level-shifting function, allowing the high-side control signals to be referenced to the logic-level ground. A simple bootstrap capacitor and diode for each phase is sufficient to provide the floating power supply for the high-side drivers, a common and cost-effective technique fully supported by this IGBT module's internal design.
If your design requires a compact, reliable, and efficient power stage for motor control, the Mitsubishi PM75CS1D060 offers a compelling, integrated solution. For detailed application support or to discuss your specific requirements, please contact our technical team.
