PM50CSD060 Product details
FEATURE
a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
For example, typical VCE(sat)=1.7V
b) Using new Diode which is designed to get soft reverse recovery characteristics.
c) Keeping the package compatibility.
The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.
• 3φ 50A, 600V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
(P-Fo available from upper leg devices)
• Acoustic noise-less 3.7kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
File No.E80271
Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :50A
Collector current Icp 1ms Tc=25°C :100A
Collector power dissipation Pc:125W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:-20~+100°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2.5~3.5 N·m
Weight 560g
