FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1μm fine rule process.
For example, typical Vce(sat)=1.5V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each con-servation upper and lower arm of IPM.
c) New small packageReduce the package size by 10%, thickness by 22% from S-DASH series.
•3φ 100A, 600V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage (P-Fo availablefrom upper arm devices)
• Acoustic noise-less 11kW class inverter application
• UL RecognizedYellow Card No.E80276(N)
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
VCES Collector-Emitter Voltage 600V
VGES Gate-Emitter voltage:±20V
±lc Collector Current Tc= 25°C 100A
±ICP Collector Current (Peak) TC= 25°C 200A
PC Collector Dissipation TC= 25°C 462W
Tj Junction Temperature -20~+100°C
Tstg Storage Temperature -40~+125°C
Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500V
Mounting screw torque 2.5~3.5 N·m
Weight 380g
