Mitsubishi PM75RL1A120 IGBT Module

Manufacturer Part Number: PM75RL1A120

FEATURE

Inverter + Brake + Drive & Protection IC

a) Adopting new 5th generation Full-Gate CSTBTTM chip

b) The over-temperature protection which detects the chip surface temperature of CSTBTTM is adopted.

C) Error output signal is possible from all each protection upper and lower arm of IPM.

d) Compatible L-series package.

●3φ 75A, 1200V Current-sense and temperature sense IGBT type inverter

●Monolithic gate drive & protection logic

●Detection, protection & status indication circuits for, short- circuit, over-temperature & under-voltage (P-FO available

from upper arm devices)

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :75A

Collector current Icp 1ms Tc=25°C :150A

Collector power dissipation Pc:462W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 2.5~3.5 N·m

Weight 380g