CM50TF-28H Mitsubishi 1400V 50A Dual IGBT Module

Content last revised on December 8, 2025

CM50TF-28H: Engineering for High-Efficiency Power Conversion

The Mitsubishi CM50TF-28H is a six-IGBT module engineered to deliver robust performance and high efficiency in demanding power conversion systems. With core specifications of 1400V and 50A, this H-Series module integrates Mitsubishi's advanced CSTBT™ (Carrier Stored Trench-Gate Bipolar Transistor) technology to significantly reduce power losses. Key benefits include minimized conduction losses and superior thermal performance, making it a strategic choice for high-frequency applications. This module is particularly well-suited for designs requiring a high voltage margin, such as those connected to 575V or 690V industrial AC lines, ensuring both reliability and operational safety.

Key Parameter Overview

Decoding the Specs for Enhanced Thermal Reliability

The technical specifications of the CM50TF-28H are central to its performance in high-stress environments. The combination of a high voltage rating and low saturation voltage is critical for designers of industrial equipment seeking both durability and efficiency. Understanding these parameters is the first step in leveraging the module's full capabilities for optimized system design.

Download the CM50TF-28H datasheet for detailed specifications and performance curves.

Application Scenarios & Value

Achieving System-Level Benefits in High-Voltage Motor Control

The CM50TF-28H is engineered for robust performance in medium-power three-phase applications. Its primary value is demonstrated in systems like AC Motor Control, Motion/Servo Control, and Uninterruptible Power Supplies (UPS), where efficiency and reliability are paramount. For an engineer designing a Variable Frequency Drive (VFD) for a 15 kW motor operating on a 600V-class line, the 1400V Vces rating of this module provides a critical safety margin against voltage spikes commonly found in industrial environments. This high blocking voltage capability prevents catastrophic failures and enhances the longevity of the drive.

The module's low collector-emitter saturation voltage (Vce(sat)) of 2.7V (max) directly translates to lower conduction losses during operation. Think of Vce(sat) as the friction of an electronic switch; a lower value means less energy is wasted as heat when the switch is on. This reduction in waste heat allows for smaller, more cost-effective heatsinks and can lead to a more compact overall system design, a key objective in modern power electronics. While the 50A current rating is ideal for this power class, for systems demanding higher current, the related CM100DY-24H offers a 100A capability within a 1200V classification.

Technical Deep Dive

A Closer Look at CSTBT™ for Reduced Conduction Losses

A defining feature of the CM50TF-28H is its use of Mitsubishi's CSTBT™ (Carrier Stored Trench-Gate Bipolar Transistor) technology. This advanced silicon structure is central to achieving the module's low Vce(sat). Unlike conventional trench IGBTs, the CSTBT™ incorporates an additional n+ layer beneath the trench gate. This layer acts as a reservoir, accumulating charge carriers (electrons and holes) during the on-state.

This "stored carrier" effect significantly increases the conductivity of the IGBT, which in turn lowers the on-state voltage drop, or VCE(sat) . To use an analogy, the stored carrier layer works like a supercharger for an engine. It boosts the device's performance (lowering voltage loss) by making more charge carriers readily available, without needing a larger, less efficient chip. The engineering outcome is a direct reduction in conduction losses—the primary source of heat in many inverter applications—leading to higher overall system efficiency and improved thermal management.

Frequently Asked Questions (FAQ)

What is the primary benefit of the 1400V Vces rating in the CM50TF-28H?

The 1400V collector-emitter voltage provides a substantial safety margin for applications running on 575V or 690V AC lines, protecting the module from transient overvoltages and increasing the overall robustness and lifespan of the power system.

How does the integrated free-wheeling diode affect performance?

The discrete super-fast recovery free-wheeling diode (FWD) is optimized for high-frequency operation. It provides a safe path for inductive current when the IGBT switches off, minimizing reverse recovery losses and protecting the IGBT from damage, which is essential in motor drive and inverter circuits.

Is the CM50TF-28H suitable for high-frequency switching?

Yes, the module is designed for high-frequency operation. The combination of low-loss CSTBT™ technology and a fast-recovery FWD makes it well-suited for applications employing high PWM frequencies to reduce audible noise and improve motor control accuracy.

What does the isolated baseplate feature mean for system assembly?

The isolated baseplate means that the internal electronic components are electrically insulated from the metal base used for mounting and heat sinking. This simplifies system assembly by eliminating the need for additional insulating layers between the module and the heatsink, reducing manufacturing complexity and improving thermal transfer.

Strategic Fit and Application Guidance

The CM50TF-28H is strategically positioned for engineers and system architects who prioritize energy efficiency and long-term reliability in medium-power industrial systems. Its robust 1400V rating and low-loss characteristics make it a forward-looking choice for designs that must not only meet current performance benchmarks but also adhere to increasingly stringent energy consumption standards. By integrating this module, designers can develop more compact, efficient, and durable power conversion solutions, providing a distinct competitive advantage in the industrial automation and power supply markets.