#GeneSiC Semiconductor, #MURF20010R, #IGBT_Module, #IGBT, MURF20010R Rectifier Diode, 1 Phase, 2 Element, 100A, 100V V(RRM), Silicon, TO-244,; MURF20010R
Manufacturer Part Number: MURF20010RPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: GENESIC SEMICONDUCTOR INCPackage Description: R-PUFM-X2ECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: GeneSic Semiconductor IncRisk Rank: 5.74Application: SUPER FAST RECOVERYCase Connection: ANODEConfiguration: COMMON ANODE, 2 ELEMENTSDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 1 VJEDEC-95 Code: TO-244JESD-30 Code: R-PUFM-X2Non-rep Pk Forward Current-Max: 2000 ANumber of Elements: 2Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 150 °COperating Temperature-Min: -55 °COutput Current-Max: 100 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTRep Pk Reverse Voltage-Max: 100 VReverse Current-Max: 25 µAReverse Recovery Time-Max: 0.075 µsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPER Rectifier Diode, 1 Phase, 2 Element, 100A, 100V V(RRM), Silicon, TO-244,