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Hitachi PM50502C New IGBT Module

#Hitachi, #PM50502C, #IGBT_Module, #IGBT, PM50502C 2 MOS: 50A 500V

· Categories: IGBT Module
· Manufacturer: Hitachi
· Price: US$
· Date Code: 2021+
. Available Qty: 103
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PM50502C Specification

Sell PM50502C, #Hitachi #PM50502C New Stock, PM50502C 2 MOS: 50A 500V, #IGBT_Module, #IGBT, #PM50502C
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PM50502C Description

Silicon N-Channel power MOSFET module. High speed power switching, 50 A, 500 V.

Features

. Equipped with Power MOS FET

. Low On-Resistance

. High Speed Switching

. Low Drive Current

. Wide Area of Safe Operation

. Inherent Parallel Diod between Source and Drain

.Isolated Base from Terminal

. Suitable for Motor Driver, Switching Regulator and etc.

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:500V

Gate-Emitter voltage VGES:±20V

Collector current Ic:50A

Collector current Icp:100A

Collector power dissipation Pc:300W

Collector-Emitter voltage VCES:2000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

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