#Fuji, #1DI200MA_050, #IGBT_Module, #IGBT, 1DI200MA-050 Power Bipolar Transistor, 200A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin; 1DI200MA
Manufacturer Part Number: 1DI200MA-050Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-PUFM-X4Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Collector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 600 VConfiguration: DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 2000JESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 125 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation Ambient-Max: 1000 WQualification Status: Not QualifiedSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Max (toff): 10000 nsTurn-on Time-Max (ton): 3000 ns Power Bipolar Transistor, 200A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin