#Fuji, #1DI200ZN_120, #IGBT_Module, #IGBT, 1DI200ZN-120 Power Bipolar Transistor, 200A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin; 1DI200Z
Manufacturer Part Number: 1DI200ZN-120Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-PUFM-X5Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Collector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 1200 VConfiguration: DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 100Fall Time-Max (tf): 3000 nsJESD-30 Code: R-PUFM-X5Number of Elements: 1Number of Terminals: 5Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation Ambient-Max: 1400 WPower Dissipation-Max (Abs): 1400 WQualification Status: Not QualifiedRise Time-Max (tr): 3000 nsSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Max (toff): 17000 nsTurn-on Time-Max (ton): 3000 ns Power Bipolar Transistor, 200A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin