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Microsemi Corporation  1N5767

  • 1N5767

1N5767 Pin Diode, 100V V(BR), Silicon, GLASS PACKAGE-2; 1N5767

· Categories: IGBT
· Manufacturer: Microsemi Corporation 
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1696
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Content last revised on June 23, 2023

Manufacturer Part Number: 1N5767Pbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPackage Description: O-LALF-W2Pin Count: 2HTS Code: 8541.10.00.80Manufacturer: Microsemi CorporationRisk Rank: 5.24Additional Feature: LOW DISTORTIONApplication: ATTENUATOR; SWITCHINGBreakdown Voltage-Min: 100 VCase Connection: ISOLATEDConfiguration: SINGLEDiode Capacitance-Max: 0.4 pFDiode Capacitance-Nom: 0.4 pFDiode Element Material: SILICONDiode Forward Resistance-Max: 3.5 ΩDiode Res Test Current: 100 mADiode Res Test Frequency: 100 MHzDiode Type: PIN DIODEFrequency Band: ULTRA HIGH FREQUENCYJESD-30 Code: O-LALF-W2JESD-609 Code: e0Minority Carrier Lifetime-Nom: 2 µsNumber of Elements: 1Number of Terminals: 2Operating Temperature-Max: 175 °COperating Temperature-Min: -65 °CPackage Body Material: GLASSPackage Shape: ROUNDPackage Style: LONG FORMPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedSubcategory: PIN DiodesSurface Mount: NOTechnology: POSITIVE-INTRINSIC-NEGATIVETerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: WIRETerminal Position: AXIALTime Pin Diode, 100V V(BR), Silicon, GLASS PACKAGE-2