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Fuji 2DI30D-100 IGBT Module

#Fuji, #2DI30D_100, #IGBT_Module, #IGBT, 2DI30D-100 Power Bipolar Transistor, 30A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin; 2DI30D-100

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$
· Date Code: 2015+
. Available Qty: 3010
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2DI30D-100 Specification

Sell 2DI30D-100, #Fuji #2DI30D-100 Stock, 2DI30D-100 Power Bipolar Transistor, 30A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin; 2DI30D-100, #IGBT_Module, #IGBT, #2DI30D_100
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/2di30d-100.html

Manufacturer Part Number: 2DI30D-100Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-PUFM-X7Manufacturer: Fuji Electric Co LtdRisk Rank: 5.81Collector Current-Max (IC): 30 ACollector-Emitter Voltage-Max: 1000 VConfiguration: COMPLEXDC Current Gain-Min (hFE): 100Fall Time-Max (tf): 3000 nsJESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation Ambient-Max: 300 WPower Dissipation-Max (Abs): 300 WQualification Status: Not QualifiedRise Time-Max (tr): 2500 nsSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Max (toff): 18000 nsTurn-on Time-Max (ton): 2500 ns Power Bipolar Transistor, 30A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin

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