Fuji 2MI50S-050 IGBT Module

Manufacturer Part Number: 2MI50S-050Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-PUFM-X8Manufacturer: Fuji Electric Co LtdRisk Rank: 5.83Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTORDS Breakdown Voltage-Min: 500 VDrain Current-Max (Abs) (ID): 50 ADrain Current-Max (ID): 50 ADrain-source On Resistance-Max: 0.11 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X8Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 400 WPulsed Drain Current-Max (IDM): 150 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICON Power Field-Effect Transistor, 50A I(D), 500V, 0.11ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET