#Motorola , #2N5415, #IGBT_Module, #IGBT, 2N5415 Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD; 2N5415
Manufacturer Part Number: 2N5415Rohs Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: MOTOROLA INCPackage Description: CYLINDRICAL, O-MBCY-W3ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Motorola Semiconductor ProductsRisk Rank: 5.68Collector Current-Max (IC): 1 ACollector-Base Capacitance-Max: 15 pFCollector-Emitter Voltage-Max: 200 VConfiguration: SINGLEDC Current Gain-Min (hFE): 30JEDEC-95 Code: TO-205ADJESD-30 Code: O-MBCY-W3JESD-609 Code: e0Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 200 °CPackage Body Material: METALPackage Shape: ROUNDPackage Style: CYLINDRICALPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: PNPPower Dissipation Ambient-Max: 10 WQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: WIRETerminal Position: BOTTOMTime Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD