#ON , #2N6052G, #IGBT_Module, #IGBT, 2N6052G 12 A, 100 V PNP Darlington Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY; 2N6052G
Manufacturer Part Number: 2N6052GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPart Package Code: TO-3Package Description: FLANGE MOUNT, O-MBFM-P2Pin Count: 2Manufacturer Package Code: 1-07ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 0.52Case Connection: COLLECTORCollector Current-Max (IC): 12 ACollector-Emitter Voltage-Max: 100 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 100JEDEC-95 Code: TO-204AAJESD-30 Code: O-MBFM-P2JESD-609 Code: e3Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 200 °CPackage Body Material: METALPackage Shape: ROUNDPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Polarity/Channel Type: PNPPower Dissipation-Max (Abs): 150 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: Tin (Sn)Terminal Form: PIN/PEGTerminal Position: BOTTOMTime 12 A, 100 V PNP Darlington Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY