Diodes 2N7002DW-7

  • 2N7002DW-7

2N7002DW-7 Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6; 2N7002DW-7

· Categories: IGBT
· Manufacturer: Diodes
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Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 1953
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Content last revised on May 2, 2023

Manufacturer Part Number: 2N7002DW-7-FPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G6Pin Count: 6ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 0.63Additional Feature: HIGH RELIABILITYConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (Abs) (ID): 0.115 ADrain Current-Max (ID): 0.115 ADrain-source On Resistance-Max: 7.5 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 5 pFJESD-30 Code: R-PDSO-G6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.2 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6