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Diodes 2N7002TA

  • 2N7002TA

2N7002TA Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; 2N7002TA

· Categories: IGBT
· Manufacturer: Diodes
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 1715
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Content last revised on December 18, 2023

Manufacturer Part Number: 2N7002TAPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G3ECCN Code: EAR99HTS Code: 8541.21.00.95Manufacturer: Diodes IncorporatedRisk Rank: 6.69Configuration: SINGLEDS Breakdown Voltage-Min: 60 VDrain Current-Max (Abs) (ID): 0.115 ADrain Current-Max (ID): 0.115 ADrain-source On Resistance-Max: 7.5 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 5 pFJESD-30 Code: R-PDSO-G3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.33 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,