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Diodes 2N7002V-7 IGBT Module

#Diodes, #2N7002V_7, #IGBT_Module, #IGBT, 2N7002V-7 Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconducto

· Categories: IGBT Module
· Manufacturer: Diodes
· Price: US$
· Date Code: 2015+
. Available Qty: 1371
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2N7002V-7 Specification

Sell 2N7002V-7, #Diodes #2N7002V-7 Stock, 2N7002V-7 Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6; 2N7002V-7, #IGBT_Module, #IGBT, #2N7002V_7
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URL: https://www.slw-ele.com/2n7002v-7.html

Manufacturer Part Number: 2N7002V-7Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: DIODES INCPackage Description: GREEN, PLASTIC PACKAGE-6Pin Count: 6ECCN Code: EAR99HTS Code: 8541.21.00.95Manufacturer: Diodes IncorporatedRisk Rank: 7.17Additional Feature: HIGH RELIABILITYConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (Abs) (ID): 0.28 ADrain Current-Max (ID): 0.28 ADrain-source On Resistance-Max: 13.5 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 5 pFJESD-30 Code: R-PDSO-F6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.15 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: FLATTerminal Position: DUALTime Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6

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