#Panasonic, #2SB0951AQ, #IGBT_Module, #IGBT, 2SB0951AQ Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS
Manufacturer Part Number: 2SB0951AQPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: PANASONIC CORPPackage Description: FLANGE MOUNT, R-PSFM-T3ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Panasonic Electronic ComponentsRisk Rank: 5.83Case Connection: ISOLATEDCollector Current-Max (IC): 8 ACollector-Emitter Voltage-Max: 80 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 2000JEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: PNPPower Dissipation-Max (Abs): 45 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3