Rohm 2SB1189T100Q IGBT Module

Manufacturer: Rohm Semiconductor  Product Category: Bipolar Transistors - BJT  RoHS:  Details   Mounting Style: SMD/SMT  Package / Case: SOT-89-3  Transistor Polarity: PNP  Configuration: Single  Collector- Emitter Voltage VCEO Max: - 80 V  Collector- Base Voltage VCBO: - 80 V  Emitter- Base Voltage VEBO: - 5 V  Maximum DC Collector Current: - 0.7 A  Gain Bandwidth Product fT: 120 MHz  Minimum Operating Temperature: - 55 C  Maximum Operating Temperature: + 150 C  Series: 2SB1189  DC Current Gain hFE Max: 120 at 0.1 A at 3 V   Height: 1.5 mm   Length: 4.5 mm   Packaging: Cut Tape   Packaging: MouseReel   Packaging: Reel   Width: 2.5 mm   Brand: ROHM Semiconductor   Continuous Collector Current: - 0.7 A   DC Collector/Base Gain hfe Min: 120   Pd - Power Dissipation: 2 W   Product Type: BJTs - Bipolar Transistors   Factory Pack Quantity: 1000   Subcategory: Transistors   Unit Weight: 0.004603 oz TRANS PNP 80V 0.7A SOT-89