Rohm Semiconductor 2SD1980TL IGBT Module

Manufacturer Part Number: 2SD1980TLPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Rohm CO LTDPart Package Code: SC-63Package Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 3ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: Rohm SemiconductorRisk Rank: 1.11Additional Feature: BUILT IN BIAS RESISTANCE RATIO IS 0.0857Case Connection: COLLECTORCollector Current-Max (IC): 2 ACollector-Emitter Voltage-Max: 100 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 1000JESD-30 Code: R-PSSO-G2JESD-609 Code: e2Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPNPower Dissipation Ambient-Max: 10 WPower Dissipation-Max (Abs): 10 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin/Copper (Sn98Cu2)Terminal Form: GULL WINGTerminal Position: SINGLETime Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, SC-63, 3 PIN