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Panasonic Electronic Components - Semiconductor Products 2SD2018

  • 2SD2018

2SD2018 Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126B-A1, 3 PIN; 2SD2018

· Categories: IGBT
· Manufacturer: Panasonic Electronic Components - Semiconductor Products
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1255
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Content last revised on August 28, 2023

Manufacturer Part Number: 2SD2018Part Life Cycle Code: ObsoleteIhs Manufacturer: PANASONIC CORPPackage Description: FLANGE MOUNT, R-PSFM-T3ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Panasonic Electronic ComponentsRisk Rank: 5.82Case Connection: ISOLATEDCollector Current-Max (IC): 1 ACollector-Emitter Voltage-Max: 50 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 6500JEDEC-95 Code: TO-126JESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 1.2 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: AMPLIFIERTransistor Element Material: SILICON Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126B-A1, 3 PIN